This textbook introduces the physics and applications of transport in mesoscopic devices and nanoscale electronic systems and devices. This expanded second edition is fully updated and contains the latest research in the field, including nano-devices for qubits, from both silicon quantum dots and superconducting SQUID circuits. Each chapter has worked examples, problems and solutions, and videos are provided as supplementary material.
Intended as a textbook for first-year graduate courses in nanoelectronics or mesoscopic physics, the book is also a valuable reference text for researchers interested in nanostructures, and useful supplementary reading for advanced courses in quantum mechanics and electronic devices.
Key Features
- Introduces the physics and applications of transport in mesoscopic and nanoscale electronic systems and devices
- Thoroughly updated second edition that includes the latest hot topics from the field
- Focuses on semiconductor mesoscopic devices and incorporates related topics including superconductors and qubits for quantum computing
- Includes worked examples, problems and videos
Author(s): David K. Ferry
Edition: 2
Publisher: IOP Publishing
Year: 2020
Language: English
Pages: 376
City: Bristol
PRELIMS.pdf
Preface to the second edition
Preface to the first edition
Author biography
David K Ferry
CH001.pdf
Chapter 1 The world of nanoelectronics
1.1 Moore’s law
1.2 Nanostructures
1.3 Some electronic length and time scales
1.4 Heterostructures for mesoscopic devices
1.4.1 The MOS structure
1.4.2 Fabricating the MOSFET
1.4.3 The GaAs/AlGaAs heterostructure
1.4.4 Other important materials
1.5 Superconductors
1.5.1 The Meissner effect
1.5.2 The BCS theory
1.6 Bits and qubits
1.7 Some notes on fabrication
1.7.1 Lithography
1.7.2 Etching
1.7.3 Bottom-up fabrication
Problems
References
CH002.pdf
Chapter 2 Wires and channels
2.1 The quantum point contact
2.2 The density of states
2.2.1 Three dimensions
2.2.2 Two dimensions
2.2.3 One dimension
2.2.4 Multiple subbands
2.3 The Landauer formula
2.3.1 Temperature dependence
2.3.2 Scattering and energy relaxation
2.3.3 Contact resistance and scaled CMOS
2.4 Beyond the simple theory for the QPC
2.4.1 High bias transport
2.4.2 Below the first plateau
2.5 Simulating the channel: the scattering matrix
2.6 Simulating the channel: recursive Green’s functions
Problems
Appendix A Coupled quantum and Poisson problems
Appendix B The harmonic oscillator
References
CH003.pdf
Chapter 3 The Aharonov–Bohm effect
3.1 Simple gauge theory of the AB effect
3.2 Temperature dependence of the AB effect
3.3 The AB effect in other structures
3.4 Gated AB rings
3.5 The electrostatic AB effect
3.6 The AAS effect
3.7 Weak localization
3.7.1 A semiclassical approach to the conductance change
3.7.2 Role of the magnetic field
3.8 Graphene rings
Problems
Appendix C The gauge in field theory
References
CH004.pdf
Chapter 4 Layered compounds
4.1 Graphene
4.2 Carbon nanotubes
4.3 Topological insulators
4.4 The metal chalcogenides
Problems
References
CH005.pdf
Chapter 5 Localization and fluctuations
5.1 Localization of electronic states
5.1.1 The Anderson model
5.1.2 Deep levels
5.1.3 Transition metal dichalcogenides
5.2 Conductivity
5.3 Conductance fluctuations
5.4 Correlation functions
5.5 Phase-braking time
Problems
References
CH006.pdf
Chapter 6 The quantum Hall effect
6.1 The Shubnikov–de Haas effect
6.2 The quantum Hall effect
6.3 The Büttiker–Landauer approach
6.3.1 Two-terminal conductance
6.3.2 Three-terminal conductance
6.3.3 The quantum Hall device
6.3.4 Selective population of edge states
6.3.5 Nature of the edge states
6.4 The fractional quantum Hall effect
6.5 Composite fermions
Problems
References
CH007.pdf
Chapter 7 Spin
7.1 The spin Hall effect
7.1.1 The spin–orbit interaction
7.1.2 Bulk inversion asymmetry
7.1.3 Structural inversion asymmetry
7.1.4 Berry phase
7.1.5 Studies of the spin Hall effect
7.2 Spin injection
7.3 Spin currents in nanowires
7.4 Spin qubits
7.5 Spin relaxation
Problems
Appendix D Spin angular momentum
Appendix E The Bloch sphere
References
CH008.pdf
Chapter 8 Tunnel devices
8.1 Coulomb blockade
8.2 Single-electron structures
8.2.1 A simple quantum-dot tunneling device
8.2.2 The gated single-electron device
8.2.3 Double dots
8.3 Quantum dots and qubits
8.4 The Josephson qubits
8.4.1 Josephson tunneling
8.4.2 SQUIDs
8.4.3 Charge qubits
8.4.4 Flux qubit
8.4.5 The hybrid charge-flux qubit
8.4.6 Novel qubits
Problems
Appendix F Klein tunneling
Appendix G The Darwin–Fock spectrum
References
CH009.pdf
Chapter 9 Open quantum dots
9.1 Conductance fluctuations in open quantum dots
9.1.1 Magnetotransport
9.1.2 Gate-induced fluctuations
9.1.3 Phase-breaking processes
9.2 Einselection and the environment
9.2.1 Classical orbits
9.2.2 Coupling the dot to the environment
9.2.3 Relating classical and quantum orbits
9.2.4 Pointer state statistics
9.2.5 Hybrid states
9.2.6 Quantum Darwinism
9.3 Imaging the pointer state scar
Problems
References
CH010.pdf
Chapter 10 Hot carriers in mesoscopic devices
10.1 Energy-loss rates
10.2 The energy-relaxation time
10.3 Nonlinear transport
10.3.1 Velocity saturation
10.3.2 Intervalley transfer
10.3.3 NDC and NDR
10.3.4 Velocity overshoot
Problems
References
