Examines some of the charge carrier transport issues encountered in the field of modern semiconductor devices and novel materials.
Author(s): Kevin F. Brennan, P. Paul Ruden
Edition: 1st
Publisher: World Scientific Publishing Company
Year: 2001
Language: English
Pages: 270
Foreword ......Page 7
CONTENTS ......Page 13
1. Introduction ......Page 15
2. Quantum vs. Classical: Where does the Difference Arise? ......Page 16
3. Non-Equilibrium Green's Functions ......Page 19
4. Trajectories Dissipation and Reversibility ......Page 21
5. The Initial Condition for the Green's Function ......Page 24
6. The Equations of Motion ......Page 26
7. Wigner Equation of Motion ......Page 28
8. Summary ......Page 33
1. Introduction ......Page 39
2. Elementary Definition of the Wigner Function ......Page 40
3. Main Properties of the Wigner Function ......Page 42
4. The Coefficients fnm(r P) Coherent Evolution ......Page 44
5. Dynamical Equation ......Page 47
6. Phonon Interaction ......Page 53
7. Wigner Paths ......Page 56
8. Monte Carlo Simulation ......Page 60
9. p and w Dependent Wigner Function from the G< Green Function ......Page 69
10. Conclusions ......Page 73
1. Introduction ......Page 77
2. Formalism ......Page 78
3. Local Inhomogeneities ......Page 82
4. Analysis for Constant Electric Field ......Page 87
5. Summary and Conclusion ......Page 104
1. Introduction ......Page 107
2. Theory ......Page 111
3. Illustrative Quantum Transport Simulations ......Page 114
4. Improved CBMC Algorithm ......Page 119
5. Simplified CBMC Simulations ......Page 121
6. Full-Band NAB-CBMC Simulations ......Page 124
7. Conclusion ......Page 126
2. Polarization-Induced Electrons ......Page 131
3. The Boltzmann Equation ......Page 134
4. Electron-Electron Scattering ......Page 136
5. Phonon Scattering ......Page 143
6. Electron-Electron Scattering Dominated Transport of 2D Gas in GaN/AIGaN Quantum Wells ......Page 146
9. References ......Page 161
1. Introduction ......Page 163
2. Impact Ionization Rate ......Page 165
3. Ensemble Monte Carlo Simulation and Impact Ionization Coefficient ......Page 172
4. Discussion and Conclusions ......Page 173
1. Introduction ......Page 177
2. Transport Model for the Wide Band Gap Semiconductors ......Page 179
3. Bulk Material Results ......Page 203
4. Conclusions ......Page 226
1. Introduction ......Page 237
2. Time-of-Flight Mobility Measurements ......Page 244
3. Mobility from Single Carrier SCL Diode I-V Characteristics ......Page 249
4. Mobility Models ......Page 253
5. Conclusion ......Page 262
