Thermal Reliability of Power Semiconductor Device in the Renewable Energy System

496693_1_En_OFC
Preface
Acknowledgments
Contents
About the Authors
Abbreviations
1 Introduction
1.1 Development of the Renewable Energy System
1.2 Role of the Power Converter in the Renewable Energy System
1.3 Application of the Power Semiconductor Device in the Converter
References
2 Thermal Fatigue Failure Mechanism of IGBT Module
2.1 Type and Structure of the IGBT Module
2.1.1 Wire-Bond Module
2.1.2 Rigid Press-Pack Module
2.1.3 Safety-Compliant Press-Pack Module
2.2 Failures of the IGBT Module When Used in the Renewable Energy System
2.3 Transient Failure
2.3.1 Open-Circuit Failure
2.3.2 Short-Circuit Failure
2.4 Gradual Failure
2.4.1 Gradual Failure of the Wire-Bond IGBT Module
2.4.2 Gradual Failure of the Press-Pack IGBT Module
References
3 Thermal Model and Thermal Parameter Monitoring
3.1 Review of Existing Thermal Parameter Monitoring Methods
3.2 One-Dimensional Thermal Network Model
3.2.1 Steady-State Thermal Response
3.2.2 Transient Thermal Response
3.3 Structural Function Method for the Thermal Parameter Estimation
3.4 Thermal Parameter Identification Using the Case Temperature
3.4.1 Theoretical Analysis
3.4.2 Experimental Validation
3.4.3 Practical Considerations
References
4 Junction Temperature Extraction of the Power Semiconductor Device
4.1 Overview of the Junction Temperature Extraction Methods
4.1.1 Direct Extraction Methods
4.1.2 Indirect Extraction Methods
4.2 Temperature Extraction Based on the Switching Characteristic of Device
4.2.1 Miller Plateau of Gate Voltage During the Turn-On Time as the TSEP
4.2.2 Constant Current Drive Circuit for the Measurement of Miller Plateau of Gate Voltage
4.2.3 Relationship Between the Miller Plateau of Gate Voltage and Junction Temperature
4.3 Thermal Flow and Equivalent Circuit Analysis of the IGBT Module
4.3.1 Heat Transfer in the IGBT Module and Heat Sink
4.3.2 Foster and Cauer Thermal Network
4.3.3 Multi-Heat-Source Thermal Network
4.3.4 Electro-thermal Analogy Theory
4.4 Temperature Calculation for the IGBT Module
4.4.1 Thermal Network of the IGBT Module
4.4.2 Power Loss Estimation of the Device
4.4.3 Junction Temperature Calculation at the Switching Cycle
4.4.4 Junction Temperature Calculation at the Fundamental Frequency Cycle
4.4.5 Simulation Validation
4.4.6 Experimental Validation
References
5 Multi-time Scale Lifetime Evaluation of the Device in the Renewable Energy System
5.1 Analysis of the Device Lifetime Influencing Factors
5.2 Lifetime Model and Parameter Extraction
5.2.1 Analytical Model
5.2.2 Physics-of-Failure Model
5.3 Lifetime Evaluation of the IGBT Module in the Wind Energy System
5.3.1 System Description and Wind Turbine Model
5.3.2 Power Loss and Junction Temperature Calculation
5.3.3 Lifetime Calculation
5.3.4 Rain-Flow Counting Algorithm
5.4 Probability Estimation and Distribution Characteristics of the Device Consumed Lifetime
5.4.1 Distribution Characteristics of the Device Consumed Lifetime
5.4.2 Strategy for the LFTC Smoothing
5.4.3 Probability Estimation of the Device Lifetime
References
6 Thermal Management Method and Optimization
6.1 Time-Scale of the Junction Temperature Fluctuation
6.2 Dynamic Temperature Regulation of the Power Semiconductor Device
6.2.1 Loss Compensation
6.2.2 Loss Reduction
6.2.3 Cooling System Adjustment
6.3 Thermal Management Method for the Renewable Energy Application
6.3.1 Method Based on the Effectiveness of Thermal Management
6.3.2 Results for the Thermal Management Method and Experimental Validation
6.3.3 Practical Implications
References
7 Prospect
7.1 Application Trend of the Thermal Parameter Monitoring
7.2 Challenge of the IGBT Lifetime Evaluation in the Renewable Application
7.3 Application Analysis of the SiC Device
References