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Technology of Gallium Nitride Crystal Growth

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This book deals with the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production. Leading experts from industry and academia report in a very comprehensive way on the current state-of-the-art of the growth technologies and optical and structural properties of the GaN crystals are compared.

Author(s): Andrew D. Hanser, Keith R. Evans (auth.), Dirk Ehrentraut, Elke Meissner, Michal Bockowski (eds.)
Series: Springer Series in Materials Science 133
Edition: 1
Publisher: Springer-Verlag Berlin Heidelberg
Year: 2010

Language: English
Pages: 326
Tags: Crystallography; Optical and Electronic Materials

Front Matter....Pages i-xxi
Front Matter....Pages 1-1
Development of the Bulk GaN Substrate Market....Pages 3-27
Front Matter....Pages 30-30
Hydride Vapor Phase Epitaxy of GaN....Pages 31-60
Growth of Bulk GaN Crystals by HVPE on Single Crystalline GaN Seeds....Pages 61-78
Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy Using Void-Assisted Separation Technology....Pages 79-96
Nonpolar and Semipolar GaN Growth by HVPE....Pages 97-117
High Growth Rate MOVPE....Pages 119-133
Front Matter....Pages 136-136
Ammonothermal Growth of GaN Under Ammono-Basic Conditions....Pages 137-160
A Pathway Toward Bulk Growth of GaN by the Ammonothermal Method....Pages 161-182
Acidic Ammonothermal Growth Technology for GaN....Pages 183-203
Front Matter....Pages 207-207
High Pressure Solution Growth of Gallium Nitride....Pages 207-234
A Brief Review on the Na-Flux Method Toward Growth of Large-Size GaN Crystal....Pages 235-244
Low Pressure Solution Growth of Gallium Nitride....Pages 245-273
Front Matter....Pages 277-277
Optical Properties of GaN Substrates....Pages 277-293
Point Defects and Impurities in Bulk GaN Studied by Positron Annihilation Spectroscopy....Pages 295-316
Back Matter....Pages 317-326