'Spintronics' is based on the control and manipulation of electron spin instead of, or in addition to, its charge, leading to novel electronic devices (spintronic devices) such as spin field effect transistors (SFETs), spin storage/memory devices or spin quantum computers, which hold the promise of reduced power consumption, faster operation and smaller size. This book provides leading-edge research from around the globe on the materials, applications and devices associated with spintronics.
Author(s): Giulia C. Lombardi, Ginevra E. Bianchi
Publisher: Nova Science Publishers
Year: 2009
Language: English
Pages: 251
Tags: Физика;Физика твердого тела;Магнитные свойства твердых тел;
SPINTRONICS: MATERIALS, APPLICATIONS, AND DEVICES......Page 3
SPINTRONICS: MATERIALS, APPLICATIONS, AND DEVICES......Page 5
CONTENTS......Page 7
PREFACE......Page 9
Abstract......Page 13
1. Introduction......Page 14
2. Intergranular Magneto-resistance of Half-Metallic Ferromagnet CrO2 with Cr2O5 Barriers......Page 15
3. Magnetization and Magneto-resistance in an MoO2/CrO2 Mixed System......Page 22
4. Magnetism and Magneto-resistance of MoxCr1-xOy System......Page 29
5. Inverse TMR Effect in a Granular Fe3O4/CrO2 System near the Percolation Threshold......Page 36
6. Magneto-resistance of Nano-Fe3O4/Ag Granular System......Page 43
7. Study on Anomalous Magneto-resistance in Nano-Fe3O4/Ag Granular System......Page 49
References......Page 57
Abstract......Page 61
References......Page 69
1. Introduction
......Page 71
2. Magnetic Transition Metal Doped Semiconductors
......Page 73
3. DMS without Magnetic Elements
......Page 75
4. DMS by Anion Doping with 2p Light Elements
......Page 78
5. Concluding Remarks
......Page 84
References......Page 85
I. Introduction......Page 91
II. Spin Waves (Magnons) in (Ga,Mn)As......Page 93
III. Light-Induced Magnetic Precession in (Ga,Mn)As......Page 99
IV. Discussion......Page 104
Conclusion......Page 105
References......Page 106
I. Introduction......Page 109
II. Current-Induced Magnertization Reversal......Page 112
III. Current-Induced Magnetic Oscillation......Page 124
IV. Current-Induced Domain Wall Motion......Page 135
References......Page 145
Abstract......Page 153
1. Introduction
......Page 154
2. Bloch Sphere
......Page 155
3. Spin Surfaces: Inverted Band HgTe/CdTe QW
......Page 167
4. Spin Surfaces: AlAs/GaAs QW and QT
......Page 182
5. Conclusion
......Page 191
References......Page 193
1. Introduction
......Page 197
2. F/S Junctions: Basic Aspects
......Page 198
3. Josephson Junction Fabrication
......Page 202
4. Nanoscale Device Process
......Page 204
5. Magnetic Measurements
......Page 206
6. Transport Measurements
......Page 211
7. Conclusion
......Page 220
Acknowledgements......Page 221
References......Page 222
Abstract......Page 225
1. Introduction
......Page 226
2. Electronic and Gap Properties – Slater Pauling Behavior
......Page 227
3. Defects in Full-Heuslers Containing Co and Mn
......Page 228
4. Defects Driven Half-Metallic Ferrimagnetism
......Page 230
5. Summary and Conclusions
......Page 235
References......Page 236
1. Introduction......Page 239
2. Spin Drift–Diffusion Model......Page 241
3. Spin Transport and Spin Currents......Page 243
4. Spin Drift–Diffusion Crossover and Transport Regimes......Page 245
5. Diffusion Analysis......Page 248
6. Relations between Ec and δs......Page 250
References......Page 251
ELECTRONICS, SPINTRONICS AND ORBITRONICS......Page 253
References......Page 256
INDEX......Page 257
