Spintronics: From Materials to Devices

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Spintronics is an emerging technology exploiting the spin degree of freedom and has proved to be very promising for new types of fast electronic devices. Amongst the anticipated advantages of spintronics technologies, researchers have identified the non-volatile storage of data with high density and low energy consumption as particularly relevant.

This monograph examines the concept of half-metallic compounds perspectives to obtain novel solutions and discusses several oxides such as perovskites, double perovskites and CrO2 as well as Heusler compounds. Such materials can be designed and made with high spin polarization and, especially in the case of Heusler compounds, many material-related problems present in current-day 3d metal systems, can be overcome.

Spintronics: From Materials to Devices provides an insight into the current research on Heusler compounds and offers a general understanding of structure–property relationships, including the influence of disorder and correlations on the electronic structure and interfaces. Spintronics devices such as magnetic tunnel junctions (MTJs) and giant magnetoresistance (GMR) devices, with current perpendicular to the plane, in which Co2 based Heusler compounds are used as new electrode materials, are also introduced.

From materials design by theoretical methods and the preparation and properties of the materials to the production of thin films and devices, this monograph represents a valuable guide to both novices and experts in the fields of Chemistry, Physics, and Materials Science.

Author(s): Tanja Graf, Claudia Felser (auth.), Claudia Felser, Gerhard H Fecher (eds.)
Edition: 1
Publisher: Springer Netherlands
Year: 2013

Language: English
Pages: 369
Tags: Optical and Electronic Materials; Physical Chemistry; Materials Science, general; Surfaces and Interfaces, Thin Films

Front Matter....Pages I-XXI
Heusler Compounds at a Glance....Pages 1-13
New Heusler Compounds and Their Properties....Pages 15-43
Crystal Structure of Heusler Compounds....Pages 45-59
Substitution Effects in Double Perovskites: How the Crystal Structure Influences the Electronic Properties....Pages 61-70
Half-Metallic Ferromagnets....Pages 71-95
Correlation and Chemical Disorder in Heusler Compounds: A Spectroscopical Study....Pages 97-114
Theory of the Half-Metallic Heusler Compounds....Pages 115-165
Electronic structure of complex oxides....Pages 167-204
Local Structure of Highly Spin Polarised Heusler Compounds Revealed by Nuclear Magnetic Resonance Spectroscopy....Pages 205-220
New Materials with High Spin Polarization Investigated by X-Ray Magnetic Circular Dichroism....Pages 221-241
Hard X-Ray Photoelectron Spectroscopy of New Materials for Spintronics....Pages 243-269
Characterization of the Surface Electronic Properties of Co 2 Cr 1−x Fe x Al....Pages 271-284
Magneto-Optical Investigations and Ion Beam-Induced Modification of Heusler Compounds....Pages 285-302
Co 2 Fe(Al 1−x Si x ) Heusler Alloys and Their Applications to Spintronics....Pages 303-330
Transport Properties of Co 2 (Mn, Fe)Si Thin Films....Pages 331-342
Preparation and Investigation of Interfaces of Co 2 Cr 1−x Fe x Al Thin Films....Pages 343-353
Tunnel Magnetoresistance Effect in Tunnel Junctions with Co 2 MnSi Heusler Alloy Electrode and MgO Barrier....Pages 355-366
Back Matter....Pages 367-369