For undergraduate electrical engineering students or for practicing engineers and scientists, interested in updating their understanding of modern electronics. One of the most widely used introductory books on semiconductor materials, physics, devices and technology, this text aims to: 1) develop basic semiconductor physics concepts, so students can better understand current and future devices; and 2) provide a sound understanding of current semiconductor devices and technology, so that their applications to electronic and optoelectronic circuits and systems can be appreciated. Students are brought to a level of understanding that will enable them to read much of the current literature on new devices and applications.
Author(s): Ben G. Streetman, Sanjay Kumar Banerjee
Edition: 6
Year: 2005
Language: English
Pages: 608
Cover Page......Page 1
Title Page......Page 2
ISBN 978-8120330207......Page 3
2 Atoms and Electrons......Page 5
4 Excess Carriers in Semiconductors......Page 6
5 Junctions......Page 7
6 Field-Effect Transistors......Page 8
8 Optoelectronic Devices......Page 9
10 High-Frequency and High-Power Devices......Page 10
APPENDICES......Page 11
PREFACE......Page 12
ABOUT THE AUTHORS......Page 16
1 Crystal Properties and Growth of Semiconductors......Page 19
2 Atoms and Electrons......Page 49
3 Energy Bands and Charge Carriers in Semiconductors......Page 79
4 Excess Carriers in Semiconductors......Page 136
5 Junctions......Page 172
6 Field-Effect Transistors......Page 269
7 Bipolar Junction Transistors......Page 354
8 Optoelectronic Devices......Page 416
9 Integrated Circuits......Page 455
10 High-Frequency and High-Power Devices......Page 526
Appendix 1 Definitions of Commonly Used Symbols......Page 553
Appendix 2 Physical Constants and Conversion Factors......Page 557
Appendix 3 Properties of Semiconductor Materials......Page 558
Appendix 4 Derivation of the Density of States in the Conduction Band......Page 559
Appendix V Derivation of Fermi-Dirac Statistics......Page 564
Appendix VI Dry and Wet Thermal Oxide Thickness Grown on Si (100) as a Function of Time and Temperature......Page 568
Appendix VII Solid Solubilities of Impurities in Si......Page 570
Appendix VIII Diffusivities of Dopants in Si and Si02......Page 572
Appendix IX Projected Range and Straggle as Function of Implant Energy in Si......Page 574
ANSWERS TO SELECTED SELF QUIZ QUESTIONS......Page 577
B......Page 581
C......Page 583
D......Page 584
E......Page 585
F......Page 586
H......Page 587
I......Page 588
L......Page 590
M......Page 591
N......Page 592
O......Page 593
P......Page 594
R......Page 595
S......Page 596
T......Page 597
W......Page 598
Z......Page 599
SEMICONDUCTOR PHYSICS......Page 600
p-n JUNCTIONS......Page 601
MOS-n CHANNEL......Page 602
BJT-p-n-p......Page 603
Back Page......Page 604
