Smart power integration is at the crossroads of different fields of electronics such as high and low power, engine control and electrothermal studies of devices and circuits. These circuits are complex and are heavily influenced by substrate coupling, especially where 3D integration is concerned. This book provides an overview of smart power integration, including high voltage devices, dedicated and compatible processes, as well as isolation techniques.
Two types of integration are highlighted: modular or hybrid integration, together with compatible devices such as the insulated gate bipolar transistor (IGBT); and monolithic integration, specifically through the paradigm of functional integration. Smart Power Integration outlines the main MOS devices for high voltage integrated circuits, and explores into the fields of codesign, coupling hardware and software design, including applications to motor control. Studies focusing on heat pipes for electronics cooling are also outlined.
Author(s): Ahmed Shaker, Christian Gontrand, Mohamed Abouelatta
Series: Energy Series
Publisher: Wiley-ISTE
Year: 2022
Language: English
Pages: 322
City: London
Cover
Half-Title Page
Title Page
Copyright Page
Contents
Preface
1. Overview of Smart Power Integration
1.1. Introduction
1.2. Smart PIC applications
1.2.1. Flat panel displays
1.2.2. Computer power supplies and disk drivers
1.2.3. Variable speed motor drives
1.2.4. Factory automation
1.2.5. Telecommunications
1.2.6. Appliance controls
1.2.7. Consumer electronics
1.2.8. Lighting controls
1.2.9. Smart homes
1.2.10. Aircraft electronics (Avionics)
1.2.11. Automotive electronics
1.3. Historical view of the MOS power devices
1.4. Smart PIC fabrication processes
1.4.1. Dedicated processes
1.4.2. Compatible processes
1.5. Insulation techniques
1.5.1. Self-insulation
1.5.2. Dielectric insulation
1.5.3. Junction insulation
1.5.4. Advanced junction insulation techniques
1.6. Motivation of the book
2. Modular or Hybrid Integration
2.1. Introduction
2.2. IGBT technology evolution
2.2.1. IGBT presentation
2.2.2. Epitaxial structure with buffer layer and reduction of carrier
2.2.3. Homogeneous structure with control of load injection
2.2.4. Silicon direct bonding-IGBT
2.3. Assembly technology
2.4. Thermal aspect
2.4.1. Thermal impedance
2.5. Applications fields
2.5.1. IGBT power modules for electric traction applications
2.5.2. IPM for lowand medium-power applications
3. Monolithic Integration
3.1. Functional integration and smart power
3.2. Transition from low-voltage technology (CMOS) to high voltage
3.2.1. Introduction
3.2.2. A typical CMOS technology
3.2.3. Breakdown voltage of a microelectronics structure
3.2.4. Improved junctions breakdown by guard techniques
3.2.5. Improvement using electrical insulation techniques
3.2.6. Review of the main MOS devices for high-voltage integrated circuits
3.3. Combining analog and digital (mixed)
3.3.1. Analog: basic functional blocks in CMOS technology and basic
3.3.2. Reminder on the general structure of the operational amplifier
3.3.3. Digital
3.3.4. The notion of codesign
3.3.5. Assessment
4. Technology for Simulating Power Integrated Systems
4.1. Introduction
4.2. Hardware and software design of engine control
4.2.1. Functional specification
4.2.2. Exploring the space of solutions: the partitioned specification model
4.2.3. Mixed synthesis, hardware and software code
4.2.4. Model functional testing
4.2.5. Synthesis of the approach and related tools of the functional
4.3. Proposed design stream: related tools
4.3.1. Accuracy
4.3.2. Resources and system architecture
4.3.3. Realization
4.4. Conclusion
5. 3D Electrothermal Integration
5.1. Introduction
5.2. Electrothermal modeling of substrate
5.2.1. Brief introduction to mathematical tools
5.2.2. Simulation results by using Green/TLM
5.2.3. Thermal management in a 3D-integrated figure
5.2.4. Thermo-mechanical design
5.2.5. Thermal modeling of the connectors
5.3. Heat analysis for 3D ICs
5.3.1. 3D IC heat transfer compact model without TSVs
5.3.2. IC model for analyzing the temperature of the chip of the top
5.3.3. 3D IC thermal modeling result
5.3.4. Electrothermal (ET) modeling of very large scale circuits
5.3.5. Electrical modeling of very large scale
5.3.6. Thermal modeling of very large scale circuits
5.3.7. Electrothermal modeling of very large scale circuits
5.4. Conclusion
5.5. Heat pipe
5.6. Conclusion
6. Substrate Coupling in Smart Power Integration
6.1. Introduction
6.2. Part I: smart power integration using the DTI technique
6.2.1. DTI technology
6.2.2 DTI structure
6.2.3. LDMOSFET performance with DTI
6.2.4. Parasitic suppression in 2D smart power ICs with deep trench
6.2.5. HV dynamic signal impact on CMOS devices
6.2.6. Mixed-mode CMOS-substrate coupling simulation
6.3. Part II: smart power integration using stacked 3D technology
6.3.1. From 2D planar integration to 3D integration
6.3.2. 3D smart power integration
6.3.3. TSV-CMOS mixed-mode coupling
6.3.4. Electromagnetic impact of TSV in RF range
Conclusion
C.1. Conclusions
C.2. Future work
Appendix: Semiconductor Physical Models
A.1. Electron and hole densities
A.2. Intrinsic semiconductors
A.3. Extrinsic semiconductors
A.4. Incomplete ionization
A.5. Mobility
A.5.1. Temperature dependence
A.5.2. Concentration-dependent low-field mobility
A.5.3. Dopant concentration dependence
A.5.4. High-field saturation
A.5.5. Carrier lifetimes and recombination
A.5.6. SRH recombination
A.5.7. Auger recombination
A.5.8. Band-gap narrowing
References
Index
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