Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy

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An extraordinary combination of material science, manufacturing processes, and innovative thinking spurred the development of SiGe heterojunction devices that offer a wide array of functions, unprecedented levels of performance, and low manufacturing costs. While there are many books on specific aspects of Si heterostructures, the Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained-Layer Epitaxy is the first book to bring all aspects together in a single source.Featuring broad, comprehensive, and in-depth discussion, this handbook distills the current state of the field in areas ranging from materials to fabrication, devices, CAD, circuits, and applications. The editor includes "snapshots" of the industrial state-of-the-art for devices and circuits, presenting a novel perspective for comparing the present status with future directions in the field. With each chapter contributed by expert authors from leading industrial and research institutions worldwide, the book is unequalled not only in breadth of scope, but also in depth of coverage, timeliness of results, and authority of references. It also includes a foreword by Dr. Bernard S. Meyerson, a pioneer in SiGe technology.Containing nearly 1000 figures along with valuable appendices, the Silicon Heterostructure Handbook authoritatively surveys materials, fabrication, device physics, transistor optimization, optoelectronics components, measurement, compact modeling, circuit design, and device simulation.

Author(s): John D. Cressler
Publisher: CRC Press
Year: 2005

Language: English
Pages: 1177
Tags: Приборостроение;Полупроводниковые приборы;

A.3.2 Derivation of a General Relationship......Page 2
A.3.3 Homojunction Transistors......Page 6
References......Page 10
A.3.5 Further Extensions......Page 12
9.14.9 RF and Analog Blocks Validation......Page 14
Appendix A.3: Integral Charge-Control Relations......Page 0
Appendix A.4: Sample SiGe HBT Compact Model Parameters......Page 1
References......Page 4
References......Page 5
9.14.2 Process Definition......Page 3
9.14.4 Down Mixers and PMA Implementation......Page 8
Other ICs......Page 7
A.3.4 Heterojunction Transistors......Page 9
Half-Rate and Full-Rate Transmitter Designs......Page 11
References......Page 13
Reconfigurable Matching Networks (Tuners)......Page 16
References......Page 19
9.8.9 Fabricated Hardware and Results......Page 21
References......Page 22
References......Page 24
Harmonic Matching Techniques......Page 28
Inductors......Page 30
Low-Frequency IM3-Cancellation......Page 32
Varactors......Page 34
Integrated Circuit Oscillators......Page 36
VCO Comparison and Summary......Page 37
9.14.10 RF and Analog Receiver Validation......Page 17
LNA Comparison and Summary......Page 20
Downconversion Mixers......Page 15
9.14.11 WCDMA Receiver Global Test......Page 18
9.8.10 Compensation and Corrections......Page 23
Mixer Comparison and Summary......Page 26
Third-order Distortion Cancellation......Page 29
High-Frequency IM3-Cancellation......Page 33
References......Page 40
9.7.5 Voltage-Controlled Oscillators......Page 27
References......Page 39