This book presents a variety of techniques using high-frequency (RF) and time-domain measurements to understand the electrical performance of novel, modern transistors made of materials such as graphene, carbon nanotubes, and silicon-on-insulator, and using new transistor structures. The author explains how to use conventional RF and time- domain measurements to characterize the performance of the transistors. In addition, he explains how novel transistors may be subject to effects such as self-heating, period-dependent output, non-linearity, susceptibility to short-term degradation, DC-invisible structural defects, and a different response to DC and transient inputs. Readers will understand that in order to fully understand and characterize the behavior of a novel transistor, there is an arsenal of dynamic techniques available. In addition to abstract concepts, the reader will learn of practical tips required to achieve meaningful measurements, and will understand the relationship between these measurements and traditional, conventional DC characteristics.
Author(s): Keith A. Jenkins
Publisher: Springer
Year: 2021
Language: English
Pages: 179
City: Cham
Preface
Acknowledgments
Contents
About the Author
Chapter 1: The Novel Transistor Characterization Challenge
1.1 Introduction: Why This Book?
1.2 General Measurement Conditions and Terminology
1.2.1 Small-Signal vs Large-Signal
1.2.2 Frequency-Domain vs Time-Domain
1.2.3 Continuous-Wave vs Transient Signals
1.3 Overview of the Content of the Book
Chapter 2: High-Frequency Test Equipment, Connections, and Contact with Transistors
2.1 Introduction
2.2 Signal Detection Instruments
2.2.1 Spectrum Analyzer
2.2.2 Vector Network Analyzer
2.2.3 Oscilloscope
2.3 Stimulus Instruments
2.4 Transmission Lines and Interconnections
2.5 Cables, Connectors, and Bandwidth
2.6 Bias Tees and Resistor Tees
2.7 Transistor Probing
2.8 Probe Pad Design
References
Chapter 3: Measurement of the Frequency Response of Transistors
3.1 Introduction
3.2 Methods for Low-Current Transistors
3.2.1 Transistor Structures
3.2.2 Rectification Technique
3.2.3 Direct Gain Measurement Technique
3.3 Frequency Performance Figure-of-Merit and Linear Model
3.3.1 AC Linear Model of Transistors
3.3.2 Measuring Small-Signal Current Gain with S-Parameters
3.3.3 Calibration
3.3.4 De-Embedding Procedure
3.3.5 Measurement Examples
3.3.6 Definition of the Physical Open Structure
3.3.7 Other Performance Figures-of-Merit
References
Chapter 4: Case Studies in the Evaluation of Novel Transistors
4.1 Voltage Gain of a Low-Current Transistor as a Function of Frequency
4.2 Vertical Gate Resistance
4.2.1 Detecting Gate Discontinuity Using VNA Measurements
4.2.2 Measuring Vertical Gate Resistance in Continuous Gate Stack
References
Chapter 5: Measurement of the AC Linearity of Transistors
5.1 Linearity Overview
5.2 One-Tone Non-Linearity: Gain Compression
5.3 Two-Tone Non-Linearity: Third-Order Intercept
References
Chapter 6: Measurement of the Large-Signal Propagation Delay of Single Transistors
6.1 Single Transistor Figure-of-Merit
6.2 Direct Propagation Delay Measurement
6.3 Ring Oscillators to Measure Delay
6.3.1 Ring Oscillator Frequency Measurement
6.3.2 Ring Oscillators with Novel Transistors
6.4 Instability in Digital Gates
6.4.1 Gated Ring Oscillators and Delay Chains
6.4.2 Transistor Aging
6.4.3 Drift and Jitter
References
Chapter 7: Measurement of the Transient Response of Transistors
7.1 Transient Effects in Transistors
7.2 Voltage Measurement Methods
7.3 Fast Source and Measurement Units
7.4 Pulsed I–V Method
7.5 Pulse-Train Method
7.6 Fast Edge Methods
References
Appendix A: Measuring Transistors with Controlled Temperature
Index
