RF and Microwave Module Level Design and Integration

Cover
Contents
List of figures
List of tables
Preface
Acknowledgments
List of abbreviations
1 RF and microwave device and module packaging
1.1 Introduction
1.2 Packaging technologies
1.2.1 System on chip
1.2.2 System on package
1.2.3 System in package
1.2.4 Wafer level packaging
1.2.4.1 WLP flip-chip technology
1.2.4.2 WLP chip scale packaging
1.2.5 Other packaging technologies
1.3 Microelectronics fabrication
1.3.1 Photolithography fabrication
1.3.2 Substrate technologies
1.3.2.1 Silicon on sapphire
1.3.2.2 Silicon on insulator
1.3.3 Microelectronics metallization and characterization
1.3.3.1 Skin depth
1.3.3.2 Thin film stress
1.3.3.3 Thin film thickness measurement methods
1.3.3.4 Characterization of sheet and bulk resistance
1.3.3.5 Electromigration
1.3.3.6 Electroless and electrolytic plating
1.3.3.7 Metal selection and design considerations
1.3.4 Dielectric permittivity characterization
1.3.5 Cleanroom classifications
1.4 RF and microwave module types
1.4.1 Monolithic modules
1.4.2 Hybrid modules
1.4.2.1 Thick-film ICs
1.4.2.2 Thin-film ICs
1.4.3 Multichip modules
References
2 Lumped and distributed passive elements
2.1 Introduction
2.2 Lumped elements
2.2.1 Resistors
2.2.1.1 Resistor modeling
2.2.1.2 Resistor implementation
2.2.1.3 Attenuators
2.2.2 Capacitors
2.2.2.1 Capacitor modeling
2.2.2.2 Capacitor implementation
2.2.2.3 Electrostatic discharge in capacitors
2.2.2.4 On-module electrostatic discharge protection
2.2.3 Inductors
2.2.3.1 Inductor modeling
2.2.3.2 Inductor implementation
2.2.3.3 Mutual inductance
2.2.3.4 Via holes
2.2.3.5 Crossovers and airbridges
2.3 Distributed elements
2.4 Design considerations
2.4.1 Self-resonant frequency
2.4.2 Reactance slope
2.4.3 Inductor orientation
2.5 Miniaturization of distributed elements
2.5.1 High permittivity materials
2.5.2 Capacitively loaded transmission line
2.6 Quality factor calculation
2.6.1 Q-factor improvement methods of inductors
2.6.1.1 Layout optimization
2.6.1.2 Patterned ground shield
2.6.1.3 Thick metal
2.6.1.4 Substrate modification
2.6.1.5 Magnetic material coating
2.6.1.6 Differential excitation
References
3 Basics of microwave network analysis
3.1 Introduction
3.2 Microwave port analysis
3.2.1 Voltage–current-based parameters
3.2.1.1 Impedance (Z-) parameters
3.2.1.2 Admittance (Y-) parameters
3.2.1.3 Transmission (ABCD) parameters
3.2.2.1 Scattering (S-) parameters
3.2.2 Traveling wave-based parameters
3.2.2.1 Scattering (S-) parameters
3.2.2.2 Generalized S-parameters
3.2.2.3 Scattering transfer (T-) parameters
3.2.2.4 Hybrid scattering (HS-) parameters
3.2.2.5 X-parameters
3.3 Microwave network basic properties
3.3.1 Linearity
3.3.2 Time invariance
3.3.3 Reciprocity
3.3.4 Symmetry
3.3.5 Passivity
3.3.6 Lossless
3.4 Signal flow graph
3.5 De-embedding and embedding S-parameters
3.6 Two-port equivalent circuits
3.7 Passive and lossless circuit synthesis
3.7.1 Singly and doubly terminated networks
3.7.2 One-port circuit synthesis
3.7.2.1 Foster synthesis
3.7.2.2 Cauer synthesis
3.7.3 Two-port circuit synthesis
References
4 Impedance matching networks
4.1 Introduction
4.2 Power transfer and power efficiency
4.3 Theoretical limitation on lossless matching networks
4.4 Single reactive element matching
4.5 Reactive L-section matching networks
4.6 T-and π-matching networks
4.6.1 T-matching Circuit
4.6.2 π-matching circuit
4.6.3 Inverters
4.7 Impedance matching using transformers
4.8 Tapped capacitor resonator matching network
4.9 Transmission lines-based matching networks
4.9.1 Quarter wavelength transformer
4.9.2 Radial stub
4.9.3 Multisection transformer
4.9.4 Tapered transmission lines
4.9.5 Nonuniform transmission lines
4.10 Power gains
4.11 Source-and load-pull analysis
4.12 Design considerations
References
5 Electromagnetic field couplings
5.1 Introduction
5.2 Electromagnetic coupling types
5.2.1 Inductive coupling
5.2.2 Capacitive coupling
5.2.3 Mixed coupling
5.2.4 Common path coupling
5.3 Coupled transmission lines
5.3.1 Single transmission line
5.3.2 Symmetric coupled transmission lines
5.3.2.1 Common and differential mode impedance
5.3.2.2 Even-and odd-mode impedance
5.3.3 Asymmetrical coupled transmission lines
5.3.3.1 Approximate normal-mode parameters
5.3.4 Additivity of electric and magnetic coupling
5.4 EM fields and shielding
5.4.1 Electromagnetic field boundary conditions
5.4.2 Near-, transition-, and far-field regions
5.4.3 Electromagnetic shielding
5.4.4 Interconnects shielding by via fence
5.5 Anisotropic laminate materials
5.6 PCB and laminate design considerations
References
6 CAD of RF and microwave circuits and modules
6.1 Introduction
6.2 Computational electromagnetic-based simulators
6.2.1 Commercially available CEM tools
6.2.2 Limitations of different CEM methods
6.2.3 Boundary conditions
6.2.4 Volumetric and surface mesh
6.3 Circuit theory-based simulators
6.3.1 Linear circuit simulators
6.3.1.1 Modified nodal analysis
6.3.2 Nonlinear circuit simulators
6.3.2.1 Harmonic balance
6.3.2.2 Transient time-domain
6.3.2.3 Envelope method
6.4 Domain decomposition for system level co-simulations
6.4.1 Linear and nonlinear simulations
6.4.2 Electro-thermal simulations
6.4.2.1 Thermal management considerations
6.4.3 Electro-acoustic simulations
6.4.4 Module integration
6.5 RF and microwave modeling
6.5.1 Polynomial curve-fit-based modeling
6.5.2 Machine learning-based modeling
6.5.3 Automatic model generation
6.6 Power handling analysis
6.7 Electromagnetic compatibility analysis
6.8 Monte Carlo yield analysis and optimization
6.9 Circuit elements sensitivity
6.10 Six Sigma
References
7 Components of RF front-end modules
7.1 Introduction
7.2 RF power amplifiers
7.2.1 Classes of power amplifiers
7.2.1.1 Class A
7.2.1.2 Class B
7.2.1.3 Class AB
7.2.1.4 Class C
7.2.1.5 Class D
7.2.1.6 Class E
7.2.1.7 Class F
7.2.2 Common PA configurations
7.2.2.1 Doherty amplifier
7.2.2.2 Direct-coupled amplifier
7.2.2.3 RC coupled multistage amplifier
7.2.2.4 Transformer coupled amplifier
7.2.2.5 Differential coupled amplifier
7.2.2.6 Darlington amplifier
7.2.3 PA stability
7.2.4 PA linearization
7.2.5 PA biasing
7.2.6 PA distortion
7.3 Low noise amplifiers
7.4 RF switches
7.4.1 PIN diode switches
7.4.2 FET switches
7.5 Phase shifters
7.6 RF filters
7.6.1 RF passive filters
7.6.1.1 Lumped-element filters
7.6.1.2 Distributed microwave filters
7.6.1.3 Coupled resonator filters
7.6.1.4 Acoustic-wave filters
7.6.1.5 Multiplexers
7.6.2 RF active filters
7.7 CMOS controllers
7.8 RF circulators and isolators
7.9 RF mixers
7.10 RF oscillators
7.11 Microwave baluns
7.12 RF power limiters
7.13 Diversity antennas
References
8 Component-and module-level measurements
8.1 Introduction
8.2 Small-signal measurements
8.3 Large-signal measurements
8.3.1 Transmitter-related measurements
8.3.1.1 Harmonics
8.3.1.2 Intermodulation distortion
8.3.1.3 Third-order intercept point
8.3.1.4 Gain compression point
8.3.1.5 Transmitter leakage and spurious emissions
8.3.1.6 Envelope and average power tracking
8.3.1.7 Error vector magnitude
8.3.1.8 Adjacent channel leakage ratio
8.3.2 Receiver-related measurements
8.3.2.1 Noise figure
8.3.2.2 Receiver sensitivity
8.3.2.3 Desense
8.3.2.4 Dynamic range
8.4 Radiated immunity and emission measurement
8.5 Wafer-level RF measurement
8.6 Phase stability in RF test cables
8.7 Port reduction method
References
Index
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