Record low Temperature Mo doped V2O5 Thermochromic Thin Films for Optoelectronic Applications

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AIP Publishing, AIP Advances 3, 112103 (2013); doi: 10.1063/1.4829663 (Received 9 February 2013; accepted 14 October 2013; published online 4 November 2013). - 8 с.
M. Nazemiyan and Y. S. Jalili.
Department of physics, Science & Research Campus, IAU. P. O. Box: 14665-678, Tehran, Iran.
SheykhBahaee Experimental Research Center, P. O. Box: 14665-678, Tehran, Iran.
Thermochromic properties of polycrystalline molybdenum doped vanadium pentoxide thin films grown by the spray pyrolysis technique were investigated. Tetragonal thin film structures of this system are grown. The transmittance spectral analysis with temperature indicates a record semiconductor-metal transition temperature of 50°C. This critical temperature is approximately 1/3 to 1/6 of magnitude expected for V2O5 thin films. The resistance of the thermochromic thin film also underwent a transition or phase change as expected, a reduction from more than few mega ohms to less than kilo ohm regime indicating potential applications in optoelectronics.
Introduction.
Experimental Details.
Results and Discussion.
Conclusion.
Acknowledgments.

Author(s): Nazemiyan M., Jalili Y.S.

Language: English
Commentary: 1792454
Tags: Приборостроение;Оптоэлектроника