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Rapid Thermal Processing. Science and Technology

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Author(s): Richard B. Fair (Eds.)
Publisher: Academic Press
Year: 1993

Language: English
Pages: 428
City: Boston
Tags: Приборостроение;Полупроводниковые приборы;

Content:
Front Matter, Page iii
Copyright, Page iv
Contributors, Page viii
1 - Rapid Thermal Processing—A Justification, Pages 1-11, Richard B. Fair
2 - Rapid Thermal Processing–Based Epitaxy, Pages 13-43, J.L. Hoyt
3 - Rapid Thermal Growth and Processing of Dielectrics, Pages 45-77, Hisham Z. Massoud
4 - Thin-Film Deposition, Pages 79-122, Mehmet C. Öztürk
5 - Extended Defects from Ion Implantation and Annealing, Pages 123-168, Kevin S. Jones, George A. Rozgonyi
6 - Junction Formation in Silicon by Rapid Thermal Annealing, Pages 169-226, Richard B. Fair
7 - Silicides, Pages 227-309, C.M. Osburn
8 - Issues in Manufacturing Unique Silicon Devices Using Rapid Thermal Annealing, Pages 311-348, B. Lojek
9 - Manufacturing Equipment Issues in Rapid Thermal Processing, Pages 349-423, Fred Roozeboom
Index, Pages 425-430