Rapid thermal processing has contributed to the development of single wafer cluster processing tools and other innovations in integrated circuit manufacturing environments. Borisenko and Hesketh review theoretical and experimental progress in the field, discussing a wide range of materials, processes, and conditions. They thoroughly cover the work of international investigators in the field.
Author(s): Victor E. Borisenko, Peter J. Hesketh (auth.)
Series: Microdevices
Edition: 1
Publisher: Springer US
Year: 1997
Language: English
Pages: 358
Tags: Optical and Electronic Materials; Solid State Physics; Spectroscopy and Microscopy
Front Matter....Pages i-xxii
Transient Heating of Semiconductors by Radiation....Pages 1-29
Recrystallization of Implanted Layers and Impurity Behavior in Silicon Crystals....Pages 31-91
Crystallization, Impurity Diffusion, and Segregation in Polycrystalline Silicon....Pages 93-111
Component Evaporation, Defect Annealing, and Impurity Diffusion in the III–V Semiconductors....Pages 113-148
Diffusion Synthesis of Silicides in Thin-Film Metal—Silicon Structures....Pages 149-191
Rapid Thermal Oxidation and Nitridation....Pages 193-252
Rapid Thermal Chemical Vapor Deposition....Pages 253-300
Back Matter....Pages 301-358