Physics and Modeling of Tera- and Nano-Devices is a compilation of papers by well-respected researchers working in the field of physics and modeling of novel electronic and optoelectronic devices. The topics covered include devices based on carbon nanotubes, generation and detection of terahertz radiation in semiconductor structures including terahertz plasma oscillations and instabilities, terahertz photomixing in semiconductor heterostructures, spin and microwave-induced phenomena in low-dimensional systems, and various computational aspects of device modeling. Researchers as well as graduate and postgraduate students working in this field will benefit from reading this book.
Contents: Semiconductor Device Scaling: Physics, Transport, and the Role of Nanowires (D K Ferry et al.); Polaronic Effects at the Field Effect Junctions for Unconventional Semiconductors (N Kirova); Cellular Monte Carlo Simulation of High Field Transport in Semiconductor Devices (S M Goodnick & M Saraniti); Nanoelectronic Device Simulation Based on the Wigner Function Formalism (H Kosina); Quantum Simulations of Dual Gate MOSFET Devices: Building and Deploying Community Nanotechnology Software Tools on nanoHUB.org (S Ahmed et al.); Positive Magneto-Resistance in a Point Contact: Possible Manifestation of Interactions (V T Renard et al.); Impact of Intrinsic Parameter Fluctuations in Nano-CMOS Devices on Circuits and Systems (S Roy et al.); HEMT-Based Nanometer Devices Toward Terahertz Era (E Sano & T Otsuji); Plasma Waves in Two-Dimensional Electron Systems and Their Applications (V Ryzhii et al.); Resonant Terahertz Detection Antenna Utilizing Plasma Oscillations in Lateral Schottky Diode (A Satou et al.); Terahertz Polarization Controller Based on Electronic Dispersion Control of 2D Plasmons (T Nishimura & T Otsuji); Higher-Order Plasmon Resonances in GaN-Based Field-Effect Transistor Arrays (V V Popov et al.); Ultra-Highly Sensitive Terahertz Detection Using Carbon-Nanotube Quantum Dots (Y Kawano et al.); Generation of Ultrashort Electron Bunches in Nanostructures by Femtosecond Laser Pulses (A Gladun et al.); Characterization of Voltage-Controlled Oscillator Using RTD Transmission Line (K Narahara et al.); Infrared Quantum-Dot Detectors with Diffusion-Limited Capture (N Vagidov et al.); Magnetoresistance in Fe/MgO/Fe Magentic Tunnel Junctions (N N Beleskii et al.); Modeling and Implementation of Spin-Based Quantum Computation (M E Hawley et al.); Quantum Engineering for Threat Reduction and Homeland Security (G P Berman et al.); Strong Phase Shift Mask Manufacturing Error Impact on the 65nm Poly Line Printability (N Belova).
Author(s): Maxim Ryzhii, Maxim Ryzhii, Victor Ryzhii
Series: Selected topics in electronics and systems 47
Publisher: World Scientific
Year: 2008
Language: English
Pages: 194
City: Singapore; Hackensack, NJ
Tags: Специальные дисциплины;Наноматериалы и нанотехнологии;
CONTENTS......Page 8
Preface......Page 6
1. Introduction......Page 10
2. Discrete Impurity Scattering Effects......Page 11
3. Ballistic Transport in Nano-Devices......Page 14
4. Nanowire Devices......Page 19
References......Page 20
1. Introduction......Page 22
2. Junction with Isotropic Semiconductor......Page 23
3. Surface Long Range Polarons in Molecular Crystals......Page 25
4. Junction with Conducting Polymer......Page 27
References......Page 29
1. Introduction......Page 30
2. Cellular Monte Carlo Method......Page 31
3. High Field Transport......Page 33
4. CMC Device Modeling......Page 34
4.2. AlGaN/GaN HFETs......Page 35
References......Page 38
1. Introduction......Page 40
2. The Physical Model......Page 41
3.1. Particle Generation......Page 42
3.3. Coupling to the Poisson Equation......Page 43
5 . Discussion......Page 44
5.1. Interpretation of the Results......Page 45
5.2. The Bound-states Problem......Page 46
6. Conclusions......Page 48
References......Page 49
1. Introduction......Page 50
2. Nanoscale Device Simulation: Quantum Effects......Page 51
3. Community Nanoscale MOSFET Softwares......Page 52
3.1 nanoFET......Page 54
4. Simulation Results and Discussion......Page 55
5. Conclusion......Page 58
References......Page 59
1. Introduction......Page 60
3. Results and discussion......Page 62
References......Page 64
1. Introduction......Page 66
2. Statistical Device Simulation......Page 67
3.1. Impact of RDF on 6-TSMM Cells......Page 69
References......Page 73
1. Introduction......Page 74
2. Present Status of Millimeter-Wave MMICs......Page 75
3. Problems in Nanometer-Scale HEMTs......Page 77
4. Plasmon Resonant Photomixer......Page 81
5. Conclusions......Page 84
References......Page 85
1. Introduction......Page 86
2. Plasma Waves and Oscillations in 2DEG Channels......Page 88
3. Plasma Instabilities......Page 91
4. Detection of THz Radiation and Frequency Multiplication Using Resonant Excitation of Plasma Oscillations......Page 93
5. Resonant Photomixing Using Plasma Oscillations......Page 95
6. Plasma Waves in Graphene-Based Heterostructures......Page 98
7. Conclusions......Page 99
References......Page 100
1. Introduction......Page 104
2. Theory......Page 105
3. Results and Discussion......Page 107
Acknowledgments......Page 110
References......Page 111
1. Introduction......Page 112
2. Plasmon Resonant Terahertz Emitter......Page 113
3. Simulation......Page 114
5. Results and Discussion......Page 115
References......Page 118
1. Introduction......Page 122
2. Theoretical Approach......Page 126
3. Grating-Gate FET with a Common Channel......Page 127
4. FET Array with Separate 2D Electron Channels......Page 128
References......Page 130
1. Introduction......Page 132
3. Experimental Results......Page 133
5. Summary......Page 134
References......Page 135
1. Introduction......Page 136
2. Equations of the Model and Results of Numerical Simulation......Page 138
3. Conclusions......Page 140
References......Page 141
1. Introduction......Page 142
2. Characteristics of Idealized RTD Lines......Page 143
3. Numerical Results......Page 147
References......Page 148
1. Introduction......Page 150
2. Theoretical Model......Page 151
3. Results of Monte-Carlo Simulations......Page 152
References......Page 156
1. Introduction......Page 158
2. Theoretical Model......Page 159
3. Numerical Results......Page 161
References......Page 162
1. Introduction......Page 164
2. Quantum Computation......Page 165
3. Background - Silicon-Based Solid-state Quantum Computer......Page 166
4. New SSQC Approach......Page 167
5. Summary......Page 169
References......Page 170
1. Introduction......Page 172
2. Dynamical Perturbation Theory for Scalable Solid-state Quantum Computation......Page 173
4. Quantum Annealing......Page 175
6. Terahertz Detector Based on Microcantilever as a Light Pressure Sensor......Page 176
7. Bose-Einstein Condensate Based Interferometers......Page 177
8. Quantum Microscopes with a Single-Spin Resolution......Page 178
9. Suppression of Fluctuations in Free Space Optical Communication......Page 179
10. Quantum Engineering with Heavy Nuclei: Connection with Electron Transport in Semiconductor Heterostructures......Page 180
References......Page 181
1. Introduction and Motivation......Page 184
2. Method and Analysis Flow......Page 186
3. Results and Discussion......Page 188
References......Page 193
