Author(s): J. Park
Publisher: Intech
Year: 2011
Language: English
Pages: 410
Tags: Приборостроение;Оптоэлектроника;
00preface_ Photodiodes - World Activities in 2011......Page 1
01apart_ 1......Page 11
01_An Absolute Radiometer Based on InP Photodiodes......Page 13
02_Physical Principles of Photocurrent Generation in Multi-Barrier Punch-Through-Structures......Page 33
03_Photon Emitting, Absorption and Reconstruction of Photons......Page 47
04apart_ 2......Page 73
04_CMOS Photodetectors......Page 75
05_Image Artifacts by Charge Pocket in Floating Diffusion Region on CMOS Image Sensors......Page 111
06_Active Pixel Sensor CMOS Operating Multi - Sampled in Time Domain......Page 131
07_Bandwidth Extension for Transimpedance Amplifiers......Page 149
08apart_ 3......Page 167
08_Avalanche Photodiodes in High-Speed Receiver Systems......Page 169
09_Silicon Photo Multipliers Detectors Operating in Geiger Regime: an Unlimited Device for Future Applications......Page 193
10_Near-Infrared Single-Photon Detection......Page 237
11_Geiger Avalanche Photodiodes (G-APDs) and Their Characterization......Page 257
12_Design of High Quantum Efficiency and High Resolution, Si/SiGe Avalanche Photodiode Focal Plane Arrays Using Novel, Back- Illuminated, Silicon-on-Sapphire Substrates......Page 277
13apart_ 4......Page 323
13_Single Crystal Diamond Schottky Photodiode......Page 325
14_GaN Based Ultraviolet Photodetectors......Page 343
15_Quantum Dot Composite Radiation Detectors......Page 363
16_HgCdTe Heterostructures Grown by MBE on Si(310) for Infrared Photodetectors......Page 377