Semiconductor nanostructures such as nanowires are promising building blocks of future nanoelectronic, nanophotonic and nanosensing devices. Their physical properties are primarily determined by the epitaxy process which is rather different from the conventional thin film growth. This book shows how the advanced nucleation theory can be used in modeling of growth properties, morphology and crystal phase of such nanostructures. The book represents a systematic account of modern nucleation theory in open systems, nanostructure nucleation and growth mechanisms, and possibilities for tuning the nanostructure properties to the desired values.
Author(s): Vladimir G. Dubrovskii (auth.)
Series: NanoScience and Technology
Edition: 1
Publisher: Springer-Verlag Berlin Heidelberg
Year: 2014
Language: English
Pages: 601
Tags: Nanoscale Science and Technology; Semiconductors; Optical and Electronic Materials; Crystallography; Surface and Interface Science, Thin Films; Nanotechnology and Microengineering
Front Matter....Pages i-xiii
Fundamentals of Nucleation Theory....Pages 1-73
Theoretical Description of Condensation Stages....Pages 75-166
Self-Induced Islands in Lattice Mismatched Systems....Pages 167-274
Vapor–Liquid–Solid Growth of Nanowires....Pages 275-395
Special Topics of Nanowire Growth and Morphology....Pages 397-498
Crystal Structure of III–V Nanowires....Pages 499-571
Back Matter....Pages 573-601