The book addresses the problem of passivation at the surface of crystalline silicon solar cells. More specifically, it reports on a high-throughput, industrially compatible deposition method for Al2O3, enabling its application to commercial solar cells. One of the main focus is on the analysis of the physics of Al2O3 as a passivating dielectric for silicon surfaces. This is accomplished through a comprehensive study, which moves from the particular, the case of aluminium oxide on silicon, to the general, the physics of surface recombination, and is able to connect theory with practice, highlighting relevant commercial applications.
Author(s): Lachlan E. Black (auth.)
Series: Springer Theses
Edition: 1
Publisher: Springer International Publishing
Year: 2016
Language: English
Pages: XXVIII, 204
Tags: Power Electronics, Electrical Machines and Networks; Surfaces and Interfaces, Thin Films; Energy Technology
Front Matter....Pages i-xxviii
Introduction....Pages 1-13
Surface Recombination Theory....Pages 15-28
Al \(_2\) O \(_3\) Deposition and Characterisation....Pages 29-40
Electrical Properties of the Si–Al \(_{2}\) O \(_{3}\) Interface....Pages 41-65
Influence of Deposition Parameters....Pages 67-77
Effect of Post-Deposition Thermal Processing....Pages 79-96
Effect of Surface Dopant Concentration....Pages 97-139
Effect of Surface Orientation and Morphology....Pages 141-153
Relationship Between Al \(_{2}\) O \(_{3}\) Bulk and Interface Properties....Pages 155-176
Conclusion....Pages 177-180
Back Matter....Pages 181-204
