Oxide materials are good candidates for replacing Si devices, which are increasingly reaching their performance limits, since the former offer a range of unique properties, due to their composition, design and/or doping techniques.
The author introduces a means of selecting oxide materials according to their functions and explains metal/oxide interface physics. As he demonstrates, material development is the key to matching oxide materials to specific practical applications.In this book, the investigation and intentional control of metal/oxide interface structure and electrical properties using data obtained with non-destructive methods such as x-ray photoelectron spectroscopy (XPS) and x-ray reflectometry (XRR) are discussed. Further, it shows how oxide materials can be used to support the development of future functional devices with high-k, ferroelectric, magnetic and optical properties. In closing, it explains optical sensors as an application of metal Schottky contact and metal/oxide resistive random access memory structure.
Author(s): Takahiro Nagata
Series: NIMS Monographs
Edition: 1
Publisher: Springer
Year: 2020
Language: English
Pages: 95
Preface
Acknowledgments
Contents
1 General Introduction
References
2 Changes in Schottky Barrier Height Behavior of Pt–Ru Alloy Contacts on Single-Crystal ZnO
2.1 Introduction
2.2 Interface Formation and Characterization
2.2.1 Schottky Barrier Height
2.2.2 Gibbs Free Energy: Ellingham Diagram
2.2.3 Phase Diagram
2.2.4 Characterization: Electrical Measurements
2.2.5 Characterization: X-Ray Photoelectron Spectroscopy
2.3 Combinatorial Synthesis of Binary Alloy Metal Contacts on Polar Face of ZnO
2.3.1 Crystal Structural Analysis
2.3.2 Surface Morphology
2.3.3 Electrical Properties
2.3.4 Chemical Bonding States (HX-PES Measurements)
2.3.5 Surface Termination Effect
2.4 Summary
References
3 Surface Passivation Effect on Schottky Contact Formation of Oxide Semiconductors
3.1 Introduction
3.2 Near-Atmospheric-Pressure Nitrogen Plasma Treatment
3.2.1 Atmospheric-Pressure Nitrogen Plasma Source
3.2.2 Nitridation of Oxide Surface
3.3 Near-Atmospheric-Pressure Nitrogen Plasma Passivation
3.3.1 Nitridation of ZnO Surface
3.3.2 Improvement of Metal/ZnO Interface
References
4 Bias-Induced Interfacial Redox Reaction in Oxide-Based Resistive Random-Access Memory Structure
4.1 Introduction
4.2 Nanoionic-Type ReRAM Structure
4.2.1 Sample Structure
4.2.2 Electrical Properties of Cu/HfO2/Pt Structure
4.3 HX-PES Measurements Under Bias Application
4.3.1 Cu/HfO2 Interface
4.3.2 Pt/HfO2 Interface
4.4 Filament Formation Process in Cu/HfO2/Pt and Pt/HfO2/Pt ReRAM Structures
4.5 Bias-Induced Cu Migration Behavior in Cu/HfO2 ReRAM Structure
4.6 Effect of Bottom Electrode on Interfacial Structure and Switching Behavior
4.6.1 Electrical Properties of Pt/Cu/HfO2/Pt/Si and Pt/Cu/HfO2/TiN/Si Structures
4.6.2 Interfacial Structure Between Cu and HfO2
4.6.3 Correlation Between Ion Migration and Switching Degradation
4.6.4 Effect of Bottom Electrode on Conductive Filament Formation
4.7 Summary
References
5 Switching Control of Oxide-Based Resistive Random-Access Memory by Valence State Control of Oxide
5.1 Introduction
5.2 Valence Control Scheme
5.3 Combinatorial Synthesis
5.3.1 Ta–Nb Binary Oxide System
5.3.2 Valence State of Oxides
5.3.3 Electrical Properties
5.4 Summary
References
6 Combinatorial Thin-Film Synthesis for New Nanoelectronics Materials
6.1 Introduction
6.2 Combinatorial Thin-Film Synthesis
6.3 Focused Ar Ion-Beam Sputtering for Combinatorial Synthesis
6.3.1 Energy of Focused Ar Ion Beam Sputtering
6.3.2 Metal Thin-Film Growth on Oxide
6.3.3 Combinatorial Thin-Film Synthesis by FIBS
6.4 Combinatorial Characterization
6.4.1 Two-Dimensional X-Ray Diffraction Method
6.4.2 Atomic Force Microscopy-Based Electrical Property Mapping Method
6.5 Summary
References
7 General Summary
