NANODEVICES FOR INTEGRATED CIRCUIT DESIGN
Nanodevices are an integral part of many of the technologies that we use every day. It is a constantly changing and evolving area, with new materials, processes, and applications coming online almost daily.
Increasing demand for smart and intelligent devices in human life with better sensing, communication and signal processing is increasingly pushing researchers and designers towards future design challenges based upon internet-of-things (IoT) applications. Several types of research have been done at the level of solid-state devices, circuits, and materials to optimize system performance with low power consumption. For suitable IoT-based systems, there are some key areas, such as the design of energy storage devices, energy harvesters, novel low power high-speed devices, and circuits. Uses of new materials for different purposes, such as semiconductors, metals, and insulators in different parts of devices, circuits, and energy sources, also play a significant role in smart applications of such systems. Emerging techniques like machine learning and artificial intelligence are also becoming a part of the latest developments in an electronic device and circuit design.
This groundbreaking new book will, among other things, aid developing countries in updating their semiconductor industries in terms of IC design and manufacturing to avoid dependency on other countries. Likewise, as an introduction to the area for the new-hire or student, and as a reference for the veteran engineer in the field, it will be helpful for more developed countries in their pursuit of better IC design. It is a must have for any engineer, scientist, or other industry professional working in this area.
Author(s): Suman Lata Tripathi, Abhishek Kumar, K. Srinivasa Rao, Prasantha R. Mudimela
Publisher: Wiley
Year: 2023
Language: English
Pages: 304
Cover
Table of Contents
Series Page
Title Page
Copyright
List of Contributors
Preface
Acknowledgements
1 Growth of Nano-Wire Field Effect Transistor in 21st Century
1.1 Introduction
1.2 Initial Works on Nanowire Field-Effect-Transistors (NW-FET)
1.2(A) Theoretical and Simulation Studies on Nanowire FET (NW-FET)
1.2(B) Fabrication of Nanowire Field-Effect-Transistor (NW-FET)
1.3 Application of Nanowire Field-Effect-Transistors (NW-FET)
1.4 Conclusion
References
2 Impact of Silicon Nanowire-Based Transistor in IC Design Perspective
2.1 Introduction
2.2 Nanoscale Devices
2.3 Nanowire Heterostructures and Silicon Nanowires
2.4 Performance Analysis of Si Nanowire with SOI FET
2.5 Conclusion
References
3 Kink Effect in Field Effect Transistors: Different Models and Techniques
3.1 Introduction
3.2 Techniques of Kink Effect
3.3 Different Models of Kink Effect
3.4 Kink Effect in MOS Capacitors
3.5 Conclusion
References
4 Next Generation Molybdenum Disulfide FET: Its Properties, Evaluation, and Its Applications
4.1 Introduction of Two-Dimensional Materials
4.2 Evaluation of 2D-Materials
4.3 Overview of MoS2
4.4 Properties of MoS2
4.5 Fabrication of MoS2
4.6 Applications of MoS2
4.7 Comparison of Other 2D Materials with MoS2
4.8 Conclusion
References
5 Impact of Working Temperature on the ION/IOFF Ratio of a Hetero Step-Shaped Gate TFET With Improved Ambipolar Conduction
5.1 Introduction
5.2 Device Structure
5.3 Results and Discussion
5.4 Conclusion
References
6 Analysis of RF with DC and Linearity Parameter and Study of Noise Characteristics of Gate-All-Around Junctionless FET (GAA-JLFET) and Its Applications
6.1 Introduction
6.2 Structure of GAA-JLFET
6.3 Results and Discussion
6.4 Applications
6.5 Conclusion
References
7 E-Mode-Operated Advanced III-V Heterostructure Quantum Well Devices for Analog/RF and High-Power Switching Applications
7.1 Silicon Era and Scaling Limit
7.2 III-V GaN-Based Compound Semiconductors
7.3 Band-Gap Engineering
7.4 Quantum Well
7.5 Polarization in GaN Devices and their Specific Properties
7.6 Strain and Lattice Mismatch in III-N Semiconductors
7.7 High Electron Mobility Transistors (HEMTs)
7.8 Two-Dimensional Electron Gas (2DEG)
7.9 AlGaN/GaN Heterostructure HEMT
7.10 Enhancement Mode GaN DH-HEMTs Device With Boron-Doped Gate Cap Layer
7.11 High-K Gate Dielectric III-Nitride GaN MIS-HEMT Devices
7.12 Conclusion
References
8 Design of FinFET as Biosensor
8.1 Introduction
8.2 Existing FET Based Biosensors
8.3 Performance Parameters of Biosensors
8.4 FinFET Designed as Biosensor Using Visual TCAD
8.5 Biosensors in Disease Detection
8.6 Conclusion
8.7 Acknowledgement
References
9 Biodegradable and Flexible Electronics: Types and Applications
9.1 Introduction
9.2 Biodegradable and Flexible Electronics
9.3 Types of Materials Used for Biodegradable and Flexible Electronics
9.4 Applications of Biodegradable and Flexible Electronic Devices
9.5 Conclusion
References
10 Novel Parameters Extraction Method of High-Speed PIN Diode for Power Integrated Circuit
10.1 Introduction
10.2 Review of the Technology and Physics of Power PIN Diodes
10.3 State of the Art of PIN Diode Parameters Extraction
10.4 Proposed Method
10.5 Validation
10.6 Conclusion
References
11 Edge AI – A Promising Technology
11.1 Introduction
11.2 Deep Neural Networks
11.3 Model Compression Techniques for Deep Learning
11.4 Computing Infrastructures
11.5 Conclusion
References
12 Tunable Frequency Oscillator
12.1 Introduction
12.2 Experimental Methods and Materials
12.3 Results and Discussion
12.4 Conclusion
References
13 Introduction to Nanomagnetic Materials for Electronic Devices: Fundamental, Synthesis, Classification and Applications
13.1 Introduction – An Explanation of the Process and Approach
13.2 Nanomaterials
13.3 Synthesis and Characterization of Nano Materials
13.4 Characterization Technique for Structural Analysis
13.5 Magnetic Materials
13.6 Classification of Magnetic Materials
13.7 Magnetic Properties
13.8 Ferrites
13.9 Applications of Magnetic Materials
13.10 Conclusion
References
About the Editors
Index
Also of Interest
End User License Agreement
