Epitaxy is a very active area of theoretical research since several years. It is experimentally well-explored and technologically relevant for thin film growth. Recently powerful numerical techniques in combination with a deep understanding of the physical and chemical phenomena during the growth process offer the possibility to link atomistic effects at the surface to the macroscopic morphology of the film. The goal of this book is to summarize recent developments in this field, with emphasis on multiscale approaches and numerical methods. It covers atomistic, step-flow, and continuum models and provides a compact overview of these approaches. It also serves as an introduction into this highly active interdisciplinary field of research for applied mathematicians, theoretical physicists and computational materials scientists.
Author(s): Axel Voigt (Editor)
Edition: 1
Year: 2005
Language: English
Pages: 237
Contents......Page 8
Preface......Page 10
Part 1: Atomistic Models......Page 12
Lattice Gas Models and Kinetic Monte Carlo Simulations of Epitaxial Growth......Page 13
Cluster Diffusion and Island Formation on fcc(111) Metal Surfaces Studied by Atomic Scale Computer Simulations......Page 29
A Multiscale Study of the Epitaxial CVD of Si from Chlorosilanes......Page 39
Off-lattice Kinetic Monte Carlo Simulations of Strained Heteroepitaxial Growth......Page 50
Quasicontinuum Monte Carlo Simulation of Multilayer Surface Growth......Page 66
Part 2: Step Flow Models......Page 76
Introduction to Step Dynamics and Step Instabilities......Page 77
A Finite Element Framework for Burton-Cabrera-Frank Equation......Page 104
Edge Diffusion in Phase-Field Models for Epitaxial Growth......Page 122
Discretisation and Numerical Tests of a Diffuse-Interface Model......Page 133
Islands in the Stream: Electromigration-Driven Shape Evolution with Crystal Anisotropy......Page 165
Simulation of Ostwald Ripening in Homoepitaxy......Page 180
Part 3: Continuum Models......Page 198
Continuum Models for Surface Growth......Page 199
Configurational Continuum Modelling of Crystalline Surface Evolution......Page 213
On Level Set Formulations for Anisotropic Mean Curvature Flow and Surface Diffusion......Page 230
