This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET. The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition.
Author(s): Viranjay M. Srivastava, Ghanshyam Singh (auth.)
Series: Analog Circuits and Signal Processing 122
Edition: 1
Publisher: Springer International Publishing
Year: 2014
Language: English
Pages: 199
Tags: Circuits and Systems;Communications Engineering, Networks;Semiconductors
Front Matter....Pages i-xv
Introduction....Pages 1-22
Design of Double-Pole Four-Throw RF Switch....Pages 23-43
Design of Double-Gate MOSFET....Pages 45-83
Double-Pole Four-Throw RF Switch Based on Double-Gate MOSFET....Pages 85-109
Cylindrical Surrounding Double-Gate RF MOSFET....Pages 111-142
Hafnium Dioxide-Based Double-Pole Four-Throw Double-Gate RF CMOS Switch....Pages 143-163
Testing of MOSFETs Surfaces Using Image Acquisition....Pages 165-175
Conclusions and Future Scope....Pages 177-182
Back Matter....Pages 183-199
