Mid-infrared Semiconductor Optoelectronics (Springer Series in Optical Sciences)

Contents......Page 8
Part I: Materials and Device Design Considerations......Page 20
1 Challenges and Opportunities in MWIR Laser Active Region Design......Page 21
2 Metrics for Material Comparison and Device Design......Page 24
3 Band-edge Optimization of Active Region Materials......Page 39
4 Final State Optimization of Active Region Materials......Page 65
5 Cavity-integrated Active Region Design for Optimal Laser Performance......Page 71
6 Calculating the Electronic and Optical Properties of Semiconductors......Page 77
7 Concluding Remarks......Page 93
Appendix. Derivation of Expressions for the Electronic and Optical Properties of Semiconductors......Page 94
References......Page 102
1 Bandstructure Calculation by the k.p Method......Page 111
2 Transition Rates......Page 123
3 High Pressure......Page 132
4 Conclusion......Page 143
References......Page 144
Part II: Lasers......Page 146
1 Introduction......Page 147
2 III-Sb-based Material System......Page 148
3 Fabrication of (AlGaIn)(AsSb)-based Diode Lasers......Page 152
4 Gain and Loss Mechanisms in III-Sb-based Lasers Emitting at Around 2 μm......Page 156
5 High-power Performance of 2 μm III-Sb-based Diode Lasers......Page 162
6 Long-wavelength III-Sb-based Type-I QW Lasers......Page 166
7 Outlook......Page 167
References......Page 169
1 Introduction......Page 174
2 A Short Description of Vertical-cavity Lasers......Page 175
3 VCSELs Emitting in the 2–3 μm Range......Page 183
4 Conclusion......Page 199
References......Page 200
1 Introduction......Page 204
2 Advances in the MBE Growth of "W" Laser Structures......Page 206
3 Optically Pumped "W" Lasers......Page 211
4 Single-stage "W" Diode Lasers......Page 214
5 Interband Cascade "W" Lasers......Page 216
6 "W" VCSELs and PCDFB Lasers......Page 218
7 Critical Issues in Improving the Performance of "W" Lasers......Page 223
8 Conclusions......Page 227
References......Page 228
1 Introduction......Page 233
3 Interface Luminescence Properties of the Type II Broken-gap Single p-GaInAsSb/p-InAs Heterojunction......Page 234
4 Interface Laser with Improved Temperature Dependence......Page 242
5 Conclusions......Page 248
References......Page 249
2 Spectroscopy with IV-VI Semiconductor Lasers......Page 251
3 IV-VI Semiconductor Growth and Characterization......Page 255
4 Self-heating Effects in IV-VI Mid-IR Lasers......Page 262
5 Electrophonon Resonance in PbSe QWs......Page 263
6 Progress in Laser Fabrication Using Substrate Removal......Page 268
7 Summary......Page 273
References......Page 274
1 Introduction......Page 279
2 Vertical Surface Emitting Lasers......Page 280
3 Lead Salt-based Bragg Interference Mirrors......Page 282
4 Lead Salt Vertical Cavity Surface Emitting Lasers......Page 286
5 Self-assembled Infrared Quantum Dot Lasers......Page 295
6 Lead Salt VCSELs with Different Active Regions......Page 302
7 CW-VCSELs Emitting at 6-8 μm......Page 307
Acknowledgements......Page 312
References......Page 313
2 Optically Pumped Laser Design......Page 316
3 Laser Characteristics......Page 328
References......Page 334
1 Introduction......Page 336
2 QCL Active Region Design......Page 339
3 Quantum Cascade Lasers for 3-5μm Operation......Page 349
4 Quantum Cascade Lasers Grown by Metal-Organic Vapour Phase Epitaxy......Page 360
References......Page 364
Part III: LEDs and Detectors......Page 369
1 Introduction......Page 370
2 Limitations to LED Performance......Page 373
3 High-pressure Measurements......Page 385
4 Optical Extraction......Page 388
5 Comparison of Devices......Page 390
6 InAsSb Quantum Dot Light Emitting Diodes Grown by Liquid Phase Epitaxy......Page 392
7 Superluminescence and Ring Lasers......Page 397
8 Conclusion......Page 400
References......Page 401
1 Introduction......Page 406
2 Device Configuration and Fabrication......Page 407
3 Choice of the Operating Mode......Page 419
4 Out-coupling of Radiation in Mid-IR Devices......Page 426
5 The Use of Diode Opto-pairs for Chemical Sensing......Page 430
Acknowledgements......Page 435
References......Page 436
1 Introduction......Page 440
2 MWIR Transitions in QWs......Page 442
3 Strain-balanced QWIPs for High-temperature Operation......Page 447
4 Enhanced Detector Performance and Functionality......Page 455
5 Conclusions......Page 458
References......Page 459
1 Introduction......Page 464
2 Negative Luminescent Parameters......Page 466
3 The Magnetoconcentration Effect......Page 469
4 Photodiodes......Page 473
5 Applications of Negative Luminescence......Page 484
6 Summary......Page 493
References......Page 494
1 Introduction......Page 497
2 Infrared Detection with Quantum Dots......Page 501
3 Self-assembly of Quantum Dots by the Stranski-Krastanow Growth Mode......Page 508
4 Characterization of Mid-infrared Quantum Dot Photodetectors......Page 510
5 Conclusions......Page 516
Appendix. Infrared Photodetector Figures of Merit......Page 517
References......Page 520
1 Introduction......Page 524
2 Theoretical Modeling......Page 525
3 Material Growth and Characterization......Page 535
4 Photodiodes with Cut-off Wavelength ~8 μm......Page 540
5 Type II Focal Plane Arrays......Page 542
6 Nanopillar Fabrication......Page 544
Appendix. Superlattice Hamiltonian Matrix......Page 552
References......Page 554
1 Introduction......Page 555
2 Impact Ionization in III-V Semiconductors......Page 556
3 Ionization Coefficients in III-V Semiconductors and their Alloys......Page 565
4 Avalanche Photodiodes for the 2-2.5 μm Spectral Range......Page 572
5 Avalanche Photodiodes for the 3-5 μm Spectral Range......Page 589
6 Methods of Separating Ionization Coefficients Using Quantum Structures......Page 594
7 Conclusion......Page 596
References......Page 597
Part IV: Applications......Page 601
2 Gas Absorption Spectra......Page 602
3 Methods of Gas Detection......Page 604
4 Infrared Sources for Gas Detection......Page 605
5 Infrared Detectors for Gas Detection......Page 608
6 Design of Optical and Gas Sampling Systems......Page 611
7 Laser Techniques......Page 616
References......Page 617
1 Introduction......Page 621
2 Mid-IR Biophotonics......Page 622
3 Mid-IR Bio-photonics Applications......Page 631
References......Page 637
1 Introduction......Page 641
2 Historical Development......Page 643
3 Propagation and Atmospheric Windows......Page 645
4 Defeat Mechanisms......Page 651
5 The Evolution of IR-jammer Systems......Page 667
6 Characteristics of Laser-based Jammers......Page 675
7 Future Developments of Laser-based Systems......Page 676
References......Page 677
1 Introduction and Overview......Page 678
2 TPV Literature and Other Sources of Information......Page 684
3 Basic Operation of TPV Cells......Page 685
4 TPV System Thermodynamic Limits and Modeling......Page 689
5 TPV Cell Modeling......Page 694
6 Survey of TPV Materials and Devices......Page 702
7 Concluding Remarks and Outlook for TPV Technology......Page 726
Appendix. Modeling of InGaAsSb TPV Cells......Page 728
References......Page 736
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