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Microwave Transistor Amplifiers: Analysis and Design, 2nd ed

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Pearson, 1996. — 506 p.
A unified presentation of the analysis and design of microwave transistor amplifiers (and oscillators) — using scattering parameters techniques. Key features: Presents material on: transmission-lines concepts; power waves and generalized scattering parameters; measurements of scattering parameters; bipolar and field-effect transistors; power gain expressions; constant VSWR circles; gain, noise, and VSWR design trade offs; broadband amplifiers, high-power amplifiers; oscillators.

Author(s): Gonzalez G.

Language: English
Commentary: 1933944
Tags: Приборостроение;СВЧ-техника