In this book, the fundamentals of micro- and nanofabrication are described on the basis of the concept of “using gases as a fabrication tool.” Unlike other books available on the subject, this volume assumes only entry-level mathematics, physics, and chemistry of undergraduates or high-school students in science and engineering courses. Necessary theories are plainly explained to help the reader learn about this new attractive field and enable further reading of specialized books. The book is an attractive guide for students, young engineers, and anyone getting involved in micro- and nanofabrication from various fields including physics, electronics, chemistry, and materials sciences.
Author(s): Eiichi Kondoh
Publisher: Jenny Stanford Publishing
Year: 2022
Language: English
Pages: 237
City: Singapore
Cover
Half Title
Title Page
Copyright Page
Table of Contents
Preface
1: Introduction
1.1 Technologies That Underline the Information Society
1.2 World of Micro and Nano
1.3 Contents and Construction of This Book
2: Vacuum and Gas Kinetics
2.1 Introduction
2.2 Vacuum and Equation of State
2.2.1 Vacuum
2.2.2 Ideal Gases and Behavior of Gases
2.3 Gas Pressure and Internal Energy
2.3.1 Gas Pressure and Speed of Gas Molecules
2.3.2 Internal Energy of a Gas
2.4 Total Pressure and Partial Pressure
2.5 Distribution Law of Gas Velocity
2.5.1 Maxwell–Boltzmann Gas Velocity Distribution
2.5.1.1 Mean Speeds and Most Probable Speed
2.5.1.2 Meaning of Distribution Function
2.5.2 Number of Molecules Passing Through a Unit Area
2.5.2.1 Flux of Incident Molecules
2.5.2.2 Number of Molecules Passing Through an Orifice (in the Case of Molecular Flow)
2.5.2.3 Adsorption of Molecules Onto Clean Surface
2.5.2.4 Evaporation
2.5.3 Cosine Law
2.6 Mean Free Path and Collision Probability
2.6.1 Mean Free Path
2.6.2 Collision Probability
2.6.3 Mean Free Path of a Gas Mixture
2.7 Flow of Molecules Under Vacuum
2.7.1 Viscous Flow and Molecular Flow
2.7.2 Conductance
2.7.3 Conductance Calculus
2.7.4 Vacuum Flow Rate and Pumping Speed
2.7.5 Gas Admission, Pressure Regulation, and Average Residence Time
2.8 Vacuum Equipments
2.8.1 Vacuum Chamber and Pipe/Fitting
2.8.2 Vacuum Pumps
2.8.2.1 General Classification
2.8.2.2 Types of Vacuum Pumps
2.8.2.3 Introduction to Practical Designing of Vacuum Pumping Systems
3: Fundamentals of Plasma
3.1 Introduction
3.2 What Is a Plasma?
3.2.1 Particles in a Plasma
3.2.2 Motion of Charged Particles in an Electromagnetic Field
3.2.2.1 Motion in Electric Field
3.2.2.2 Conservation of Energy
3.2.2.3 Motion in a Magnetic Field
3.3 Collision of Electrons and Molecules
3.3.1 Elastic and Inelastic Collisions
3.3.2 Collision Processes
3.3.3 Collision Cross Section
3.4 Plasma Adjacent to Electrodes
3.5 Plasma Apparatus and the Interior of a Plasma
3.5.1 DC Glow Discharge
3.5.1.1 Plasma Apparatus
3.5.1.2 Initiation of Discharge
3.5.1.3 Structure of DC Glow Discharge and Plasma Sustenance
3.5.2 RF Plasma
3.5.2.1 Principle and Setup
3.5.2.2 Self-bias and its Applications
3.5.3 Development of Plasma for Micro- and Nanofabrication
3.5.3.1 Inductively Coupled Plasma
3.5.3.2 Magnetic Field and ECR Plasma
4: Physical Vapor Deposition
4.1 Introduction
4.2 Evaporation
4.2.1 Evaporation and Deposition
4.2.1.1 Vacuum Evaporation
4.2.1.2 Vacuum Evaporator
4.2.1.3 Vapor Ressure
4.2.1.4 Vaporization Rate
4.2.1.5 Deposition Rate and Film Uniformity
4.2.1.6 Multicomponent Deposition and Impurity Incorporation
4.2.2 Evaporation Sources and Derivative Methods
4.2.2.1 Resistive Evaporation
4.2.2.2 Electron Beam Evaporation
4.2.2.3 Reactive Evaporation
4.2.2.4 Ion Plating
4.2.3 Features of Vacuum Evaporation
4.3 Sputtering
4.3.1 Principle of Sputtering
4.3.1.1 Sputtering Phenomenon
4.3.1.2 Sputtering Yield
4.3.1.3 Solid Angular Distribution of Sputtered Particles
4.3.1.4 Film Thickness Distribution
4.3.1.5 Properties of Sputter-Deposited Films
4.3.2 Sputter Deposition Apparatus
4.3.2.1 DC Sputter Apparatus and RF Sputter Apparatus
4.3.2.2 Magnetron Sputtering
4.3.3 Applied Sputter Deposition
4.3.3.1 Reactive Sputtering
4.3.3.2 Deposition of Alloys and Compounds
4.3.3.3 Ion Beam Sputtering
5: Film Formation Process
5.1 Introduction
5.2 Thin Film Growth
5.2.1 Atom Stacking and Development of a Film
5.2.2 Film Surfaces
5.3 Nucleation
5.3.1 Equilibrium Theory
5.3.1.1 Homogeneous Nucleation
5.3.1.2 Heterogeneous Nucleation
5.3.1.3 Surface and Interfacial Energy and Growth Mode
5.3.2 Kinetics of Nucleation
5.3.2.1 Adsorption and Desorption
5.3.2.2 Rate of Nucleation
5.4 Development of Film Microstructures
5.4.1 Island Growth and Coalescence
5.4.2 Development of Polycrystalline Film Structures
5.4.3 Epitaxial Growth
6: Etching
6.1 Introduction
6.2 Classification of Etching
6.3 Wet Etching
6.3.1 Isotropic Etching
6.3.2 Anisotropic Etching
6.4 Physical Dry Etching
6.5 Chemical Dry Etching
6.5.1 Thermoreactive chemical Etching
6.5.2 Plasma Etching
6.5.2.1 Si Etching Under F-Based Chemistry
6.5.2.2 Etching of SiO2 and Si3N4 Using Fluorinated Gases
6.5.2.3 Selective Etching Si and SiO2
6.5.3 Photo-Assisted Chemical Etching and Electric Charging
6.6 Physical and Chemical Dry Etching
6.6.1 Reactive-Ion Etching
6.6.1.1 Principle and Apparatus of RIE
6.6.1.2 Reaction Mechanisms
6.6.1.3 Anisotropic Etching by Sidewall Protection
6.6.2 Other Types of Ion-Assisted Etching Techniques
6.6.2.1 Reactive-Ion Beam Etching
6.6.2.2 Remote Plasma Etching
7: Photolithography
7.1 Introduction
7.2 Introduction to Photolithography
7.3 Photoresist Process
7.3.1 Photoresist Materials
7.3.2 Photoresist Coating
7.4 Photomask
7.4.1 Photomask Materials
7.4.2 Designing Photomask Patterns
7.5 Exposure
7.5.1 Printers
7.5.1.1 Contact and Proximity Printers
7.5.1.2 Projection Printers and Steppers
7.5.2 Light Sources
Appendix A: Symbols and Variables
Appendix B: Basic Physical Constants
Appendix C: Development of Facets
Index
