Materials and Reliability Handbook for Semiconductor Optical and Electron Devices provides comprehensive coverage of reliability procedures and approaches for electron and photonic devices. These include lasers and high speed electronics used in cell phones, satellites, data transmission systems and displays. Lifetime predictions for compound semiconductor devices are notoriously inaccurate due to the absence of standard protocols. Manufacturers have relied on extrapolation back to room temperature of accelerated testing at elevated temperature. This technique fails for scaled, high current density devices. Device failure is driven by electric field or current mechanisms or low activation energy processes that are masked by other mechanisms at high temperature.
The Handbook addresses reliability engineering for III-V devices, including materials and electrical characterization, reliability testing, and electronic characterization. These are used to develop new simulation technologies for device operation and reliability, which allow accurate prediction of reliability as well as the design specifically for improved reliability. The Handbook emphasizes physical mechanisms rather than an electrical definition of reliability. Accelerated aging is useful only if the failure mechanism is known. The Handbook also focuses on voltage and current acceleration stress mechanisms.
Author(s): Mitsuo Fukuda (auth.), Osamu Ueda, Stephen J. Pearton (eds.)
Edition: 1
Publisher: Springer-Verlag New York
Year: 2013
Language: English
Pages: 616
Tags: Optics, Optoelectronics, Plasmonics and Optical Devices;Optical and Electronic Materials;Electronics and Microelectronics, Instrumentation;Electronic Circuits and Devices;Characterization and Evaluation of Materials;Laser Technology
Front Matter....Pages i-xv
Front Matter....Pages 1-1
Reliability Testing of Semiconductor Optical Devices....Pages 3-17
Failure Analysis of Semiconductor Optical Devices....Pages 19-53
Failure Analysis Using Optical Evaluation Technique (OBIC) of LDs and APDs for Fiber Optical Communication....Pages 55-85
Reliability and Degradation of III-V Optical Devices Focusing on Gradual Degradation....Pages 87-122
Catastrophic Optical Damage in High-Power, Broad-Area Laser Diodes....Pages 123-145
Reliability and Degradation of Vertical-Cavity Surface-Emitting Lasers....Pages 147-205
Structural Defects in GaN-Based Materials and Their Relation to GaN-Based Laser Diodes....Pages 207-245
InGaN Laser Diode Degradation....Pages 247-261
Radiation-Enhanced Dislocation Glide: The Current Status of Research....Pages 263-281
Mechanism of Defect Reactions in Semiconductors....Pages 283-316
Front Matter....Pages 317-317
Reliability Studies in the Real World....Pages 319-379
Strain Effects in AlGaN/GaN HEMTs....Pages 381-429
Reliability Issues in AlGaN/GaN High Electron Mobility Transistors....Pages 431-453
GaAs Device Reliability: High Electron Mobility Transistors and Heterojunction Bipolar Transistors....Pages 455-474
Novel Dielectrics for GaN Device Passivation and Improved Reliability....Pages 475-513
Reliability Simulation....Pages 515-544
The Analysis of Wide Band Gap Semiconductors Using Raman Spectroscopy....Pages 545-582
Reliability Study of InP-Based HBTs Operating at High Current Density....Pages 583-610
Back Matter....Pages 611-616
