Everything materials scientists need to know about the powerful analytical tools of nuclear microprobe technology This much-awaited volume covers, in a thoroughly accessible and informative way, the fast-growing field of nuclear microprobe technology and the methods for utilizing focused-light ion beams in materials characterization. Unlike any other book on the market, it concentrates on the specific needs of materials scientists and presents a comprehensive guide to all practical and theoretical aspects of this technology. Written by leading experts in the field from major microprobe centers, the book provides Coverage of all new nuclear microprobe hardware, and new ion beam techniques for materials modifications and analysis Detailed descriptions of the various uses of nuclear microprobes in materials analysis An overview of the basic aspects of the technical requirements for microprobe analysis Help in planning and managing experiments using these new analytical techniques Introductions and background material to important topics, such as ion-solid interactions, crystallography, and ion optics 240 illustrations that help explain complex points Two chapters supplemented with four-color figures Topics of interest to researchers in the fields of nuclear microscopy and materials and microelectronic device analysis and fabrication, as well as those in accelerator laboratories Materials Analysis Using a Nuclear Microprobe is an invaluable resource for both experienced researchers and newcomers to the field, for students at the graduate level, and for scientists from a wide range of disciplines who would like to find out more about research opportunities in this exciting and promising field. The emphasis in the areas of ion-solid interactions and nuclear microprobes has now shifted from the realm of pure scientific inquiry to the arena of applications. Driven partially by the development of semiconductor devices, this technology now provides powerful new tools in two important research areas—ion beam modification of materials and ion beam analysis. This book deals with the application of finely focused high-energy ion beams in materials characterization, and how they turn ion beam spectrometry into ion beam microscopy. The text includes fundamental principles in crystallography and solid-state physics, as well as the current state of the art in MeV ion optics—all of which play an important role in this technology. Along with in-depth coverage of the various processes involved in nuclear microscopy and ion-solid interactions, the book explores nuclear microprobe hardware in detail, examines various applications of nuclear microprobes for materials analysis, and considers all experimental aspects of using these new analytical methods. The authors draw on their work at the pioneering nuclear microprobe facilities at Oxford and Melbourne Universities. They share their insight and knowledge throughout and help simplify many complex problems that arise when focusing MeV ion beams down to submicron spots, or when dealing with the vast amount of data these experiments yield. Their discussion of ion beam analysis techniques is accessible and useful, addressing in particular the needs of materials scientists in a wide range of fields, while also providing information of more general appeal to other scientists involved in ion beam work. It also demonstrates how conventional and widely applied ion beam analysis with unfocused beams can be enormously enhanced by use of a focused beam. In addition to its complete and up-to-date treatment of the subject, Materials Analysis Using a Nuclear Microprobe affords us a glimpse of the future—pointing in the direction this technology is going, showing the influence it is bound to have on the work done in laboratories worldwide, and suggesting the new possibilities this will open up for a variety of ion beam applications.
Author(s): Mark B. H. Breese, David N. Jamieson, Philip J. C. King
Year: 1996
Language: English
Pages: 464
Contents......Page 5
Foreword......Page 9
Historical Background......Page 13
Preface......Page 15
Acknowledgments......Page 19
Symbols Used in the Text......Page 21
1. ION-SOLID INTERACTIONS......Page 23
1.1. ELECTRONIC ENERGY LOSS......Page 24
1.2. NUCLEAR ENERGY LOSS......Page 31
1.3. ION STRAGGLING......Page 37
1.4. EFFECTS OF CRYSTALLINITY ON THE PASSAGE OF IONS......Page 41
1.5. ION INDUCED DAMAGE IN SEMICONDUCTORS......Page 51
1.6. COMPARISON BETWEEN MeV IONS AND keV ELECTRONS......Page 59
2.1. INTRODUCTION......Page 64
2.2. NUCLEAR MICROPROBE COMPONENTS......Page 72
2.3. DATA ACQUISITION, SCANNING AND CONTROL SYSTEMS......Page 93
2.4. A DAY IN THE LIFE OF A NUCLEAR MICROPROBE......Page 100
3.1. PROBE-FORMING LENS SYSTEMS AND QUADRUPOLE......Page 103
3.2. ION OPTICS......Page 106
3.3. FIRST-ORDER THEORY......Page 109
3.4. LOW-ORDER ABERRATIONS......Page 115
3.5. HIGHER ORDER ABERRATIONS......Page 120
3.6. GRID SHADOW METHOD......Page 131
3.7. FURTHER CONSIDERATIONS......Page 156
4. ANALYTICAL TECHNIQUES......Page 161
4.1. PARTICLE INDUCED X-RAY EMISSION......Page 162
4.2. BACKSCATTERING SPECTROMETRY......Page 175
4.3. NUCLEAR REACTION ANALYSIS......Page 181
4.4. ELASTIC RECOIL DETECTION ANALYSIS......Page 187
4.5. COMPARISON WITH OTHER TECHNIQUES FOR......Page 188
4.6. ION INDUCED ELECTRON IMAGING......Page 190
1.7. SCANNING TRANSMISSION ION MICROSCOPY......Page 195
4.8. ION MICROTOMOGRAPHY......Page 206
4.9. ION BEAM INDUCED LUMINESCENCE......Page 208
5.1. INTRODUCTION......Page 223
5.2. MECHANISMS OF CHANNELING CONTRAST......Page 224
5.3. TECHNIQUES FOR PRODUCING CHANNELING CONTRAST......Page 228
5.4. PRACTICAL ASPECTS OF ION CHANNELING IMAGING......Page 241
6. ION BEAM INDUCED CHARGE......Page 269
6.1. SEMICONDUCTOR THEORY......Page 270
6.2. QUANTITATIVE INTERPRETATION OF THE ION BEAM......Page 280
6.3. INCORPORATING THE EFFECTS OF THE DEPLETION......Page 290
6.4. EXPERIMENTAL PROCEDURE......Page 294
6.5. MEASUREMENT AND COMPENSATION OF ION INDUCED......Page 297
6.6. STUDY OF NUCLEAR MICROPROBE BEAM HALO USING......Page 302
7. MICROELECTRONICS ANALYSIS......Page 308
7.1. ANALYSIS OF DEVICE ACTIVE REGIONS......Page 312
7.2. ANALYSIS OF DEVICE PHYSICAL STRUCTURE......Page 337
8.1. INTRODUCTION......Page 356
8.2. CRYSTAL DEFECT IMAGING TECHNIQUES......Page 357
8.3. CHANNELING SCANNING TRANSMISSION ION......Page 363
8.4. CHANNELING SCANNING TRANSMISSION ION......Page 376
8.5. CHANNELING SCANNING TRANSMISSION ION......Page 385
8.6. CHANNELING SCANNING TRANSMISSION ION MICROSCOPY......Page 389
8.7. DISLOCATION IMAGING USING ION BEAM INDUCED......Page 406
8.8. COMPARISON OF CRYSTAL DEFECT IMAGING......Page 411
9. OTHER MATERIALS ANALYSIS AND......Page 415
9.1. MOSAIC SPREAD IN HIGH-Tc SUPERCONDUCTOR......Page 416
9.2. ANALYSIS OF LASER-ANNEALED DIAMOND......Page 425
9.3. ANALYSIS OF TERNARY ALLOY SEMICONDUCTORS......Page 428
9.4. ANALYSIS OF AN ALUMINUM-LEAD METAL ALLOY......Page 429
9.5. MATERIALS MODIFICATION AND FABRICATION......Page 433
A.1 RELEVANT CONFERENCE......Page 444
A.2 STANDARD STEREOGRAPHIC......Page 447
INDEX......Page 449