This volume provides the first comprehensive look at a pivotal new technology in integrated circuit fabrication. For some time researchers have sought alternate processes for interconnecting the millions of transistors on each chip because conventional physical vapor deposition can no longer meet the specifications of today's complex integrated circuits. Out of this research, ionized physical vapor deposition has emerged as a premier technology for the deposition of thin metal films that form the dense interconnect wiring on state-of-the-art microprocessors and memory chips.For the first time, the most recent developments in thin film deposition using ionized physical vapor deposition (I-PVD) are presented in a single coherent source. Readers will find detailed descriptions of relevant plasma source technology, specific deposition systems, and process recipes. The tools and processes covered include DC hollow cathode magnetrons, RF inductively coupled plasmas, and microwave plasmas that are used for depositing technologically important materials such as copper, tantalum, titanium, TiN, and aluminum. In addition, this volume describes the important physical processes that occur in I-PVD in a simple and concise way. The physical descriptions are followed by experimentally-verified numerical models that provide in-depth insight into the design and operation I-PVD tools.Practicing process engineers, research and development scientists, and students will find that this book's integration of tool design, process development, and fundamental physical models make it an indispensable reference.Key Features:The first comprehensive volume on ionized physical vapor depositionCombines tool design, process development, and fundamental physical understanding to form a complete picture of I-PVDEmphasizes practical applications in the area of IC fabrication and interconnect technologyServes as a guide to select the most appropriate technology for any deposition application *This single source saves time and effort by including comprehensive information at one's finger tips*The integration of tool design, process development, and fundamental physics allows the reader to quickly understand all of the issues important to I-PVD*The numerous practical applications assist the working engineer to select and refine thin film processes
Author(s): Ronald Powell, Abraham Ulman
Publisher: Academic Press
Year: 1999
Language: English
Pages: 269
Tags: Физика;Физика плазмы;
Front Cover......Page 1
Thin Films: Ionized Physical Vapor Deposition......Page 4
Copyright Page......Page 5
Contents......Page 6
Contributors......Page 10
Preface......Page 12
I. Overview of Ionized Physical Vapor Deposition......Page 14
II. Trends in IC Fabrication......Page 16
III. Overview......Page 20
I. Introduction......Page 22
II. DC Magnetron Discharges for Sputtering of Conducting Materials......Page 24
III. Inductively Coupled Plasmas......Page 29
IV. Electron Cyclotron Resonance Plasmas......Page 36
V. Hollow Cathode Magnetron Discharges......Page 39
VI. Comparison of High-Density Plasma Sources......Page 45
I. Introduction......Page 50
II. Experimental......Page 51
III. I-PVD Operation......Page 57
IV. I-PVD Semiconductor Applications......Page 62
V. Conclusions and Future Directions......Page 77
I. Introduction......Page 80
II. Techniques in Generating ECR I-PVD Plasmas......Page 83
III. Experiments with Evaporated Copper......Page 84
IV. Experiments with Sputtered Materials......Page 87
V. Study of a Highly Ionized ECR I-PVD Reactor......Page 92
VI. Conclusions......Page 103
I. Introduction......Page 108
II. Principles of Operation......Page 109
III. Source Characterization......Page 117
IV. Process Results......Page 127
V. Other Applications......Page 147
VI. Conclusions......Page 149
I. Introduction......Page 154
II. Metallization for Integrated Circuits......Page 155
III. Characteristics of Film Deposition Using an I-PVD Source......Page 159
IV. Applications......Page 180
V. Conclusions......Page 188
I. Introduction......Page 194
II. Ionization Mechanisms......Page 195
III. Angular Distribution of Ions......Page 210
IV. Metal Density Distributions......Page 212
V. Summary......Page 218
I. Introduction......Page 222
II. Model Description......Page 224
III. Simulation Results for Aluminum Film Deposition......Page 237
Index......Page 262
Recent Volumes In This Series......Page 268
