Ion Implantation: Equipment and Techniques: Proceedings of the Fourth International Conference Berchtesgaden, Fed. Rep. of Germany, September 13–17, 1982

Front Matter....Pages I-X
Front Matter....Pages 1-1
Physical Limitations of Ion Implantation Equipment....Pages 2-24
A New Ion Implanter for Solar Cell Fabrication....Pages 25-30
SURIM — A Westinghouse Surface Implantation Machine....Pages 31-36
A New Research Implanter at the University of Surrey....Pages 37-44
Radio Frequency Ion Accelerator....Pages 45-53
Front Matter....Pages 55-55
Performance of the Bethge-Baumann Ion Source with Radio Frequency Operation....Pages 56-58
Emittance Measurements on an Indirectly Heated Heavy-Ion Source....Pages 59-62
A High-Brightness Duoplasmatron Ion Source....Pages 63-68
Optimization of a Single-Aperture Extraction System for High-Current Ion Sources....Pages 69-78
Development of a High-Current Ion Source for Non-Volatile Elements....Pages 79-85
The Use of Computers for Designing and Testing Ion Beam Systems....Pages 86-96
Multipole Ion Source for Ion Implantation and Isotope Separation....Pages 97-105
An Ion Source for Semiconductor Implantation....Pages 106-112
Front Matter....Pages 113-113
High Throughput Wafer Handling System for Serial Process Ion Implantation....Pages 114-125
Comparison of Beam Scanning Systems....Pages 126-142
A Low-Internal-Resistance and High-Precision High-Voltage Power Supply....Pages 143-148
Electrostatic Switch Used for 600 kV Ion Implanter....Pages 149-154
Automatic Wafer Handling for a Mechanically Scanned Ion Implanter....Pages 155-160
On-Line Control of Production Ion Implanters Using Standard Desk Computers....Pages 161-166
A Forty-Channel Optical-Fiber Telecommunication System for Manipulation of High-Voltage Terminals in Ion Implanters....Pages 167-171
Front Matter....Pages 113-113
Low-Cost Analog Signal Fiber Link with 300 kV Isolation....Pages 172-175
Improvements in the Vacuum System of a VDG Accelerator Used for Clean Ion Implantation....Pages 176-184
Front Matter....Pages 185-185
High Temperature Implantation of Powders Using a Horizontal Ion Beam....Pages 186-188
A Technique for Implanting Dopant Distributions in Solids....Pages 189-195
Wafer Cooling and Photoresist Masking Problems in Ion Implantation....Pages 196-213
Electron-Beam-Induced Recoil Implantation in Semiconductors at 300 K....Pages 214-220
Wafer Cooling in Ion Implantation....Pages 221-232
A Rotating Attenuator for Concentration Profiling of Implanted Helium Ions....Pages 233-239
Front Matter....Pages 241-241
Ion-Beam Lithography....Pages 242-254
Development Characteristics of Ga + Exposed PMMA and Associated Lithographic Resolution Limits....Pages 255-262
Simulation of the Lithographic Properties of Ion-Beam Resists....Pages 263-268
Deposition of Masking Films by Ion-Beam Induced Polymerization....Pages 269-272
Front Matter....Pages 273-273
Dosimetry and Beam Quality....Pages 274-290
A New Facility for Ion Beam Surface Analysis....Pages 291-299
Non-Destructive Techniques for Measuring the Parameters of Low-Energy Continuous Ion Beams....Pages 300-307
Investigation of the Lifetime of Photocurrent Carriers in Si During Ion Implantation....Pages 308-312
A Mössbauer Spectrometer for in situ Low Temperature Studies of Ion-Bombarded Metals....Pages 313-317
Background in ( n, p ) and ( n, α ) Spectrometry....Pages 318-326
Monitoring of X-Y-Scan Quality by Amorphization Contrast on Silicon Wafers....Pages 327-330
Front Matter....Pages 331-331
Techniques and Equipment for Implantation into Metals....Pages 332-346
Front Matter....Pages 331-331
Nitriding of Steels: Conventional Processes and Ion Implantation....Pages 347-356
Effect of Ion Mixing on the Wear Behaviour of Silver....Pages 357-363
Methods to Control Target Heating During Ion Implantation....Pages 364-373
Front Matter....Pages 375-375
New Applications of Ion Implantation in Silicon Processing....Pages 376-391
Limitations of Ion Implantation in MOS Technology....Pages 392-406
Implant Processes for Bipolar Product Manufacturing and Their Effects on Device Yield....Pages 407-425
Buried Silicon-Nitride Layers Formed by Nitrogen-Ion Implantation and High-Temperature Annealing....Pages 426-432
Combined Boron and Aluminum Implantation for High-Voltage Devices....Pages 433-437
Deep Implanted Layers of Boron in Silicon....Pages 438-442
Planar Channeling of Si Implants in GaAs....Pages 443-449
Application of High-Current Ion-Implantation Systems in Semiconductor-Device Technology....Pages 450-457
Implantation Doping of Germanium with Be, Mg, Zn, and B Ions....Pages 458-464
Low Energy Implantation of Nitrogen and Ammonia into Silicon....Pages 465-472
Doping Behavior of Implanted Magnesium in Silicon....Pages 473-480
Front Matter....Pages 481-481
Beam Annealing of Ion-Implanted Silicon....Pages 482-497
Radiation Annealing of Silicon-Implanted GaAs with a CW Xe Arc Lamp....Pages 498-503
Pulse-Laser-Induced Epitaxial Regrowth of Ion-Implanted Semiconductors....Pages 504-512
CO 2 Laser Annealing of Ion-Implanted Silicon: Relaxation Characteristics of Metastable Concentrations....Pages 513-519
Rapid Isothermal Annealing for Semiconductor Applications: Aspects of Equipment Design....Pages 520-531
Investigation of Polysilicon Implantation Under Thermal and Laser Annealing....Pages 532-537
Front Matter....Pages 481-481
CW-CO 2 -Laser Alloying of Au-Ge-Ni Ohmic Contacts on GaAs....Pages 538-542
Photoluminescence of Ion-Implanted Gallium Arsenide After Laser Annealing....Pages 543-548
Channeling and High-Resolution Backscattering Studies of Laser-Annealed Low-Energy Arsenic-Implanted Silicon....Pages 549-553
Back Matter....Pages 555-558