This book gives a state-of-the-art overview by internationally-recognized researchers of the breakthrough devices architectures required for Future Intelligent Integrated Systems first book in the Pan Stanford Series on Intelligent Nanosystems. Both Advanced Silicon based CMOS Technologies and New Paths to Augmented Silicon CMOS Technologies, appearing in the first section and the second section respectively, feature More Moore, More Than Moore and Beyond type of devices of interest to building Heterogeneous integrated systems. The First section highlights Advanced Silicon based CMOS Technologies with Fully Depleted Planar, Trigate and Nanowire MOSFETs, Schottky source and drains architectures and possible candidates channel materials to be co integrated with Silicon On Insulator such as Ge, III-V and Carbon or isolate silicon channel with Diamond. New Device and Functional architectures are as well reviewed by Tunneling Field Effect Transistors and 3D Monolithic Integration which the alternative materials could possibly use in the future. The way we could Augment Silicon Technologies is illustrated by the co-integration of new types of devices such as Molecular and Resistive, Spintronics based Memories, Smart Sensors using Nano scale features co-integrated with silicon CMOS or above it. 3D integration and Wafer Level Packaging are coming up as well to pack up new functions and products. The challenges to be addressed and possible solutions are described in this book.
Author(s): Simon Deleonibus
Series: Pan Stanford Series on Intelligent Nanosystems 1
Publisher: Pan Stanford Publishing
Year: 2014
Language: English
Pages: xvi+500
Introduction: Intelligent Integrated Systems Forward to Zero Variability and Zero Power! - Simon Deleonibus
Part I: Advanced Silicon-Based CMOS Technologies
1 From Planar to Trigate and Nanowire Fully Depleted Transistors - François Andrieu, Olivier Weber, Marie-Anne Jaud, Thomas Ernst, and Olivier Faynot
2 Schottky Source/Drain MOSFETs - Emmanuel Dubois, Florent Ravaux, Zhenkun Chen, Nicolas Reckinger, Xiaohui Tang, Jean-Pierre Raskin, Maud Vinet, and Louis Hutin
3 Advances in Silicon-on-Diamond Technology - Jean-Paul Mazellier, Julie Widiez, Marc Rabarot, François Andrieu, Samuel Saada, Mathieu Lions, Philippe Bergonzo, and Simon Deleonibus
4 GeOI, SiGeOI and New Devices Architectures - Cyrille Le Royer, Emmanuel Augendre, Louis Hutin, Frederic Mayer, and William van den Daele
5 3D Monolithic Integration - Maud Vinet, Perrine Batude, and Shashikanth Bobba
6 III–V Quantum Well FETs - Suman Datta
7 Carbon Integrated Electronics - Hong Li, Yasin Khatami, Deblina Sarkar, Jiahao Kang, Chuan Xu, Wei Liu, and Kaustav Banerjee
8 Tunneling Field-Effect Transistors: Challenges and Perspectives - Joachim Knoch
Part II: New Paths to Augmented Silicon CMOS Technologies
9 Molecular Memories - Julien Buckley, Tiziana Pro, Venera Aiello, Micael Charbonneau, and Barbara De Salvo
10 Resistive Memories - Blanka Magyari-Kope and Yoshio Nishi
11 High-Frequency Vibrating Nanowire - Laurent Duraffourg and Thomas Ernst
12 Spintronics - Guillaume Prenat, Ursula Ebels, Gregory Di Pendina, Ricardo Sousa, and Bernard Dieny
13 Smart Multiphysics Sensors - Masayoshi Esashi
14 3D Integration and Wafer-Level Packaging - Gilles Poupon
