The concepts in this book will provide a comprehensive overview of the current state for a broad range of nitride semiconductor devices, as well as a detailed introduction to selected materials and processing issues of general relevance for these applications. This compilation is very timely given the level of interest and the current stage of research in nitride semiconductor materials and device applications. This volume consists of chapters written by a number of leading researchers in nitride materials and device technology addressing Ohmic and Schottky contacts, AIGalnN multiple quantum well laser diodes, nitride vertical cavity emitting lasers, and ultraviolet photodetectors. This unique volume provides a comprehensive review and introduction to application and devices based on GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers.
Author(s): Edward T. Yu, M. O. Manasreh
Series: Optoelectronic Properties of Semiconductors and Superlattices, 16
Publisher: CRC Press
Year: 2002
Language: English
Pages: 714
City: Boca Raton
Cover
Half Title
Series
Title
Copyright
CONTENTS
About the Series
Preface
Introduction
1 Ohmic Contacts to GaN
2 Characterization of Schottky Contacts on Nitride Semiconductors
3 Integration of GaN Thin Films with Dissimilar Substrate Materials by Wafer Bonding and Laser Lift-Off
4 Spontaneous and Piezoelectric Polarization in Nitride Heterostructures
5 AlGaN/GaN High Electron Mobility Transistors
6 Two-Dimensional Electron Gas Transport Properties in AlGaN/GaN Heterostructure Field-Effect Transistors
7 Electron Transport in Wide-Bandgap Semiconductors and Heterostructures
8 GaN Metal-Semiconductor Field-Effect Transistor
9 Piezoelectric Effect in Group-III Nitride-Based Heterostructures and Quantum Wells
10 AlGaInN MQW Laser Diodes
11 Blue Vertical Cavity Surface Emitting Lasers and InGaN Quantum Dot Lasers
12 III-Nitride-Based UV Photodetectors
13 III-Nitride Ultraviolet Photodetectors
14 AlGaN UV Photodetectors
Index
