Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors: Volume 2, Photodetectors

Preface
Contents
About the Editor
Contributors
Part I: IR Detectors Based on II–VI Semiconductors
Chapter 1: Introduction in IR Detectors
1.1 Introduction
1.2 IR Photodetectors
1.2.1 Thermal (Non-selective) IR Detectors
1.2.2 Photonic Radiation Detectors
1.2.3 IR Photodetectors Array
1.2.4 Photosensitive Materials for IR Technology
1.2.5 Comparison of Thermal and Photonic Infrared Detectors
1.2.6 Parameters Characterizing IR Photodetectors
1.2.7 The Role of the Atmosphere in IR Technology
References
Chapter 2: Photoconductive and Photovoltaic IR Detectors
2.1 Introduction to Photoconductive and Photovoltaic IR Detectors on II-VI Semiconductors
2.2 Hg-Based Materials for IR Photon Detectors
2.3 Photoconductive and Photovoltaic IR Detectors: Design, Performance, Advantage, and Disadvantages
2.3.1 Photonic Mechanism of Detection
2.3.2 Photonic Detector Characterization
2.3.3 Photoconductive IR Detectors
2.3.4 Photovoltaic IR Detector
2.4 High Operation Temperature IR Detector
2.4.1 Ways to Improve Detector’s Performance Without Cooling
2.4.2 Photoelectromagnetic Effect IR Detectors
2.4.3 Magnetoconcentration IR Detectors
2.4.4 Dember Effect IR Detectors
2.5 PC and PV IR Detectors Manufacturing
References
Chapter 3: II–VI Compound Semiconductor Avalanche Photodiodes for the Infrared Spectral Region: Opportunities and Challenges
3.1 Introduction
3.2 Background and Roadmap
3.3 Alloy Composition and Technology
3.4 General Architecture and Operation
3.5 Fabrication and Processing
3.6 Device Concept Design and Engineering
3.7 Concluding Remarks and Outlook
References
Chapter 4: IR Detectors Array
4.1 Introduction
4.1.1 Materials and Types of IR Detectors
4.1.2 Photonic IR FPAs and Basic Materials Used to Develop Them
4.1.2.1 Materials Used in the Development of Photonic IR FPAs
4.1.2.2 Photonic IR FPAs
4.2 Photovoltaic HgCdTe-Based FPAs
4.2.1 Technological Developments
4.2.2 Photonic Cooled Detectors
4.2.3 Performances of MWIR and LWIR FPAs
4.2.3.1 Cooled FPAs for the Spectral Range of 8–12 μm
4.2.3.2 Cooled Photodetectors Array for the Spectral Range of 3–5 μm
4.3 Trends in FPAs Development
4.3.1 Pixel Size Reduction
4.3.2 Quantum-Dimensional Structures
4.3.3 Monolithic and Multispectral FPAs
4.3.4 High Operation Temperature FPAs
References
Chapter 5: New Trends and Approaches in the Development of Photonic IR Detector Technology
5.1 Introduction
5.2 High Operating Temperature (HOT) Detectors
5.3 Quantum Well Infrared Photodetectors
5.4 Type-II Strained-Layer Superlattice
5.5 Multi-Stage or Cascade IR Detectors
5.6 Unipolar/Monovalent Barrier IR Detectors
5.7 HgCdTe-Based Superlattice
5.8 Quantum Dot Infrared Photodetectors (QDIPs)
5.9 Multicolor IR Detectors
5.10 Photon Trapping Detectors
5.11 Nano Wire-Based Photodetectors
5.12 New Emerging Nanomaterials for Detection
5.13 Summary
References
Chapter 6: II-VI Semiconductor-Based Unipolar Barrier Structures for Infrared Photodetector Arrays
6.1 Introduction
6.2 Basics of Barrier Detectors Based on II-VI Semiconductors
6.3 HgCdTe Based nBn Unipolar Barrier Structures
6.4 HgCdTe Based Unipolar Barrier Structures with P-Type Layers
6.5 HgCdTe Based nBn Unipolar structures with Superlattice Barriers
6.6 HgCdTe Based NBνN HOT Unipolar Structures
6.7 Summary
References
Chapter 7: Infrared Sensing Using Mercury Chalcogenide Nanocrystals
7.1 Introduction
7.2 Enabling Transport and Photoconduction in Nanocrystal Films
7.2.1 Solid-State Ligand Exchange
7.2.2 Ink Preparation
7.3 From Proof of Concept to High Performances Sensors
7.3.1 Photoconductive Devices
7.3.2 Phototransistor
7.3.2.1 Gating Technology
7.3.2.2 Advantages of Phototransistors
7.4 Beyond the Control of the Dark Current
7.4.1 Photodiode
7.4.2 Performance Comparison
7.5 Light Management in HgX Nanocrystal Films
7.5.1 Enhancement of Absorption
7.5.2 Spectral Shaping
7.6 From Single Pixel to Focal Plane Array
7.7 Intraband Device
7.8 Conclusion
References
Chapter 8: Graphene/HgCdTe Heterojunction-Based IR Detectors
8.1 Introduction
8.2 Graphene/HgCdTe Heterojunction Based IRDs
8.2.1 Early Generation IRD Technologies
8.2.2 Existing and Next Generation Technologies, Challenges, and Prospects of Effective IR Detection
8.2.3 Graphene/HgCdTe Detector Fabrication and Operating Principle
8.2.4 Graphene/HgCdTe Heterojunction Based IRD Structures and Operation
8.2.5 Graphene/HgCdTe Heterojunction Based IRD Modelling Approach
8.3 Conclusion and Future Prospects
References
Part II: II–VI Semiconductors–Based Detectors for Visible and UV Spectral Regions
Chapter 9: CdTe-Based Photodetectors and Solar Cells
9.1 Introduction
9.2 Noteworthy Applications
9.2.1 Infrared Window
9.2.2 Electro-Optical Modulator
9.2.3 UV-Vis-Photodetector
9.3 Solar Cells
9.3.1 The Substrate
9.3.2 The Front Contact
9.3.3 The Window Layer
9.3.4 The Absorber Layer
9.3.5 The Heat Treatment in Chlorine Atmosphere
9.3.6 The Back-Contact
9.4 Conclusion
References
Chapter 10: CdSe – Based Photodetectors for Visible-NIR Spectral Region
10.1 Introduction
10.2 CdSe Carrier Dynamics
10.3 Photoconductors and Schottky Photodiodes
10.4 Heterojunction Based Photodetectors
10.5 CdSe-Organic Hybrid Photodetectors
10.6 Application of CdSe Based Photodetectors
10.7 Summary
References
Chapter 11: CdS-Based Photodetectors for Visible-UV Spectral Region
11.1 Introduction
11.2 Conventional Photodetectors and Features of Their Functioning
11.3 Fabrication of Photosensitive Devices
11.3.1 CdS PDs Based on Nanostructures
11.3.2 CdS-Based Heterostructures in PDs
11.3.3 CdS-Based Field Effect Transistor (FET) PDs
11.3.4 CdS-Based Self-Powered Photodetectors
11.4 Performance and Figures of Merit (FOM) of CdS Based UV-Visible Photodetectors
11.4.1 Self-Powered Photodetectors
11.4.2 Photodetectors Based on Nanostructures
11.4.3 CdS Photodetectors Using Piezo-Phototronic Effect
11.5 Summary
References
Chapter 12: ZnTe-Based Photodetectors for Visible-UV Spectral Region
12.1 Introduction
12.2 Optical Properties of ZnTe
12.3 Thin Film ZnTe Based Photodetectors
12.3.1 ZnTe Thin Film with Vacuum Evaporation Method
12.3.2 ZnTe Thin Film with Wet Chemical Method
12.4 ZnTe Nanostructures Based Photodetectors
12.4.1 One Dimensional ZnTe Based Photodetectors
12.4.2 Two Dimensional ZnTe Based Photodetectors
12.5 ZnTe Based Photodetectors for Terahertz Region
12.6 Heterostructured ZnTe Based Photodetectors
12.6.1 ZnTe-Si Heterostructures Based Photodetectors
12.6.2 Heterostructures Based on II-VI Semiconductors
12.7 ZnTe-Based Materials for Solar Cells
12.8 Summary and Outlook
References
Chapter 13: ZnSe-Based Photodetectors
13.1 Introduction
13.2 Photoconductive Photodetectors
13.3 The p–n Junction Photodiodes
13.4 The p-i-n Junction Photodiodes
13.5 Schottky Photodiodes
13.6 Metal–Semiconductor–Metal Photodiodes
13.7 Heterostructure-Based Photodetectors
13.8 Phototransistors
13.9 Nanowire-Based ZnSe Photodetectors
13.10 Photodetectors Based on Hybrid Structures
References
Chapter 14: ZnS-Based UV Detectors
14.1 Introduction
14.2 ZnS-Based Photodetectors
References
Chapter 15: Photodetectors Based on II-VI Multicomponent Alloys
15.1 Introduction
15.2 Photodetectors with Controlled Spectral Response
15.2.1 Solar Cells
15.2.2 Detectors for Visible Range
15.2.3 UV Detectors
15.3 Solid Solutions Providing Lattice Matching of Contacting Semiconductor Materials
15.4 Optimization of Electrophysical and Physical Properties of II-VI Compounds
15.5 Summary
References
Part III: New Trends in Development of II–VI Semiconductors–Based Photodetectors
Chapter 16: Nanowire-Based Photodetectors for Visible-UV Spectral Region
16.1 Introduction
16.2 Synthesis of NWs
16.3 Fabrication Features of NW-Based Photodetectors
16.3.1 Direct NW Integration
16.4 Single NW-Based Photodetectors
16.4.1 Photoconductive Detectors Employing Single NWs
16.4.2 Phototransistors
16.5 NWs-Based Heterostructures
16.5.1 Core-Shell Heterojunctions
16.5.2 1D Axial Heterojunctions
16.5.3 Crossed NW Heterojunctions
16.5.4 1D Nanostructure/Thin Film or Si Substrate Heterojunctions
16.5.5 Photodetector Performance
16.6 Schottky Barrier-Based Photodetectors
16.7 Summary
References
Chapter 17: QDs of Wide Band Gap II–VI Semiconductors Luminescent Properties and Photodetector Applications
17.1 Introduction
17.2 II-VI Semiconductor Quantum Dots-Based PDs and Their Fabrication Methods
17.3 QD Core/Shell Structures
17.4 Doping Influence on QDs Properties
17.5 1D Structures and QDs in Heterostructure-Based Photodetectors
17.6 QDs-Polymer Hybrid Strcutures
17.7 Photodetectors Based on QDs-Polymer Composites
17.8 PDs Based on 0D-2D Hybrid Structures
17.9 Outlook
References
Chapter 18: Solution-Processed Photodetectors
18.1 Introduction
18.2 Solution Processed II-VI Semiconductor-Based Solar Cells and Photodetectors
18.3 Solution-Processed Photodetectors with Direct Wet Chemical Synthesis of Photosensitive Layers
18.3.1 Chemical Bath Deposition (CBD)
18.3.2 Successive Ionic Layer Adsorption and Reaction Technique (SILAR)
18.4 Solution Processed Photodetector Fabricated Using Methods of Thick Film Technology
18.5 Combined Approach to the Fabrication of Solution-Processed Photodetectors
18.6 Outlook and Perspectives of Solution-Processed Technology
18.7 Conclusion
References
Chapter 19: Multicolor Photodetectors
19.1 General
19.2 HgCdTe Multicolor Detectors
19.2.1 Dual-Band HgCdTe Detectors
19.2.2 Three-Color HgCdTe Detectors
19.3 Conclusions
References
Chapter 20: Flexible Photodetectors Based on II-VI Semiconductors
20.1 Introduction
20.2 Device Structure and Substrate Materials of Flexible Photodetectors
20.2.1 Device Structure
20.2.2 Substrate Materials
20.3 Flexible Photodetectors Based on II-VI Semiconductors
20.3.1 0D II-VI Nanostructures Based Flexible Photodetectors
20.3.2 1D II-VI Semiconductors Based Flexible Photodetectors
20.3.3 2D II-VI Semiconductors Based Flexible Photodetectors
20.4 Applications of Flexible Photodetector
20.4.1 Wearable Monitoring Sensors
20.4.2 Image Sensors
20.4.3 Self-Powered Integrated Wearable Electronics
20.5 Conclusion and Outlook
References
Chapter 21: Self-Powered Photodetector
21.1 Introduction
21.2 II–VI Materials Based Self-Powered Schottky Photodetectors
21.2.1 Graphene or Carbon Based Self-Powered Schottky Photodetectors
21.2.2 Other Self-Powered Schottky Photodetectors
21.2.3 II–VI Quantum Dots-Based Self-Powered Schottky Photodetectors
21.3 Heterojunction Based Self-Powered Photodetectors
21.3.1 Some Conventional Heterojunction Based Self-Powered Photodetectors
21.3.2 2D Semiconducting Transition Metal Dichalcogenide (TMD) Heterostructure Materials Based Self-Powered Photodetectors
21.3.3 Inorganic-Organic Hybrid Heterostructures Based Self-Powered Photodetectors
21.4 Spectrum Selective Self-Powered Photodetectors
21.5 Conclusion
References
Index