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Graphene Nanostructures : Modeling, Simulation, and Applications in Electronics and Photonics

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Tremendous innovations in electronics and photonics over the past few decades have resulted in the downsizing of transistors in integrated circuits, which are now approaching atomic scales. This will soon result in the creation of a growing knowledge gap between the underlying technology and state-of-the-art electronic device modeling and simulations. This book bridges the gap by presenting cutting-edge research in  Read more...

Author(s): Yaser M. Banadaki, Safura Sharifi
Publisher: Jenny Stanford Publishing Pte. Ltd
Year: 2019

Language: English
Pages: xiv+210
Tags: Graphene;Nanostructures;Nanoelectromechanical systems

Cover
Half Title
Title Page
Copyright Page
Contents
Preface
1. Introduction to Graphene
1.1 Physical Geometry and Properties
1.2 Graphene Nanoribbon
2. Graphene for Integrated Circuits
2.1 Introduction
2.2 Scaling Challenges of Silicon Electronics
2.3 Graphene-Based Field-Effect Transistors
2.4 Graphene-Based Integrated Circuits
3. Computational Carrier Transport Model of GNRFET
3.1 Introduction
3.2 Quantum Transport Model
3.3 Quantum Capacitance in GNRFET
3.4 Computational Time
3.5 Summary
4. Scaling Effects on Performance of GNRFETs
4.1 Introduction. 4.2 Device Structure4.3 Transfer Characteristics of GNRFETs
4.4 Scaling Effects on Static Metric of GNRFETs
4.4.1 OFF-Current
4.4.2 I[sub(ON)]/I[sub(OFF)] Ratio
4.4.3 Subthreshold Swing
4.4.4 Drain-Induced Barrier Lowering
4.4.5 Voltage Transfer Characteristic
4.5 Scaling Effects on Switching Attributes of GNRFETs
4.5.1 Intrinsic Gate Capacitance
4.5.2 Intrinsic Cut-off Frequency
4.5.3 Intrinsic Gate-Delay Time
4.5.4 Power-Delay Product
4.6 Summary
5. Width-Dependent Performance of GNRFETs
5.1 Introduction
5.2 Device Structure
5.3 GNR Sub-bands. 5.4 Width-Dependent Static Metrics of GNRFETs5.4.1 OFF-Current
5.4.2 I[sub(ON)]/I[sub(OFF)] Ratio
5.4.3 Subthreshold Swing
5.5 Width-Dependent Switching Attribute of GNRFETs
5.5.1 Threshold Voltage
5.5.2 Transconductance
5.5.3 Intrinsic Gate Capacitance
5.5.4 Intrinsic Cut-off Frequency
5.5.5 Intrinsic Gate-Delay Time
5.6 Summary
6. A SPICE Physics-Based Circuit Model of GNRFETs
6.1 Introduction
6.2 GNRFET Structure
6.3 GNRFET Model
6.3.1 Computing GNR Sub-bands
6.3.2 Finding Channel Surface Potential
6.3.2.1 Computing channel charge. 6.3.2.2 Computing transient capacitance charge6.3.3 Current Modeling
6.3.3.1 Computing thermionic current
6.3.3.2 BTBT current and charge
6.3.4 Non-ballistic Transport
6.3.5 Extracting Fitting Parameters
6.4 Model Validation
6.4.1 Comparing with Computational NEGF Formalism
6.4.2 Comparing with Many-Body Problem
6.5 Effect of Edge Roughness on Device Characteristic
6.5.1 Transfer Characteristics of GNRFETs
6.5.2 OFF-State Characteristics of GNRFETs
6.6 Summary
7. Graphene-Based Circuit Design
7.1 Introduction
7.2 All-Graphene Circuits
7.3 Graphene Inverter. 7.4 Power and Delay of GNRFET Circuits7.5 GNRFET-Based Energy Recovery Logic Design
7.6 Summary
8. Graphene Sensing and Energy Recovery
8.1 Introduction
8.2 GNRFET-Based Temperature Sensors
8.3 GNRFET for Energy Harvesting
8.3.1 Thermoelectric Model
8.3.2 Electrical Conductivity
8.3.3 Seebeck Coefficient
8.3.4 Electrical Thermal Conductivity
8.3.5 Power Factor
8.3.6 Thermoelectric Figure-of-Merit ZT
8.4 Summary
9. Graphene Photonic Properties and Applications
9.1 Introduction
9.2 Photonic Properties
9.3 Graphene Photonic Applications.