Article. Published in Chemical Reviews. — 2013. — Vol. 113 — P. 3766−3798
DOI: 10.1021/cr300263aContents
Introduction
Hexagonal Boron Nitride Sheets
Electronic and Magnetic Properties of Pristine h-BN Sheets
Functionalization of h-BN Sheets
Synthesis of h-BN Sheets
Layered Transition Metal Dichalcogenides
Electronic and Magnetic Properties of Pristine TMDs
Strain Effect on the Electronic Properties of TMDs
Functionalization of TMDs
Monolayer and Few-Layer TMD FETs
Synthesis of TMD Sheets
Analysis of the Existence of Monolayer TMD Sheets
Layered Group-IV and Group-III Metal Chalcogenides
Structural and Electronic Properties of Layered Group-IV Metal Chalcogenides
Synthesis of Layered Group-IV Metal Chalcogenides
Structural and Electronic Properties of Layered Group-III Metal Chalcogenides
Electronic Properties of Single Tetralayer GaSe
Synthesis of Layered Group-III Metal Chalcogenides Van der Waals Epitaxy of Layered Metal
Chalcogenides
Silicene and Germanene
Structural and Electronic Properties of Pristine Silicene and Germanene
Functionalization of Silicene and Germanene
Synthesis of Silicene Nanosheets
Layered Binary Compounds of Group-IV Elements and Group III−V
Valley Physics and Spin Effect in Monolayers of D Sheets
Valley Physics in Monolayer TMDs
Quantum Spin Hall Effect in Silicene and Germanene
Concluding Remarks and Outlook
Author Information
Corresponding Author
Notes
Biographies
Acknowledgments
Abbreviations
References
Note Added in Proof
Note Added after ASAP Publication
