Gettering Defects in Semiconductors fulfills three basic purposes:? to systematize the experience and research in exploiting various gettering techniques in microelectronics and nanoelectronics; ? to identify new directions in research, particularly to enhance the perspective of professionals and young researchers and specialists; ? to fill a gap in the contemporary literature on the underlying semiconductor-material theory. The authors address not only well-established gettering techniques but also describe contemporary trends in gettering technologies from an international perspective. The types and properties of structural defects in semiconductors, their generating and their transforming mechanisms during fabrication are described. The primary emphasis is placed on classifying and describing specific gettering techniques, their specificity arising from both their position in a general technological process and the regimes of their application. This book addresses both engineers and material scientists interested in semiconducting materials theory and also undergraduate and graduate students in solid?state microelectronics and nanoelectronics. A comprehensive list of references provides readers with direction for further reading.
Author(s): V.A. Perevostchikov, V.D. Skoupov
Edition: 1
Publisher: Springer
Year: 2005
Language: English
Pages: 388
Contents......Page 9
List of abbreviations......Page 11
Names and abbreviations of publishing houses and periodicals......Page 14
Introduction......Page 16
1.1. General......Page 20
1.2. General information on the technology of growing crystals and their mechanical treatment......Page 32
1.3. Technological processes of dielectric film deposition and semiconductor oxidation......Page 50
1.4. Diffusive processes in semiconductors......Page 57
1.5. Ion–implanted defects......Page 63
1.6. Epitaxial layer constructing technology......Page 69
1.7. Lithographic processes......Page 77
1.8. Technological processes of etching......Page 79
1.9. Technological processes of metallization......Page 92
2.1. General......Page 94
2.2. Point defects, aggregates and microdefects......Page 97
2.3. Dislocations and stacking faults......Page 110
2.4. Defects in the device layers of the silicon-on-dielectric (SOD) structures......Page 117
2.4.1. Silicon-on-sapphire (SOS) structures......Page 118
2.4.2. Silicon-on-isolator (SOI) structures......Page 123
3.1. Gettering by structurally–damaged layers......Page 141
3.1.1. Gettering by mechanically–damaged layers......Page 142
3.1.2. Impact–acoustic treatment......Page 154
3.1.3. Diffusive doping......Page 155
3.1.4. Accelerated–ion implantation......Page 160
3.1.5. Effects of laser irradiation......Page 167
3.1.6. Gettering by porous silicon layers......Page 172
3.2.1. Metallic films......Page 176
3.2.2. Extrinsic silicate glasses......Page 177
3.2.3. Layers of polysilicon and silicon nitride......Page 178
3.2.4. Silicides of hard–melting metals......Page 180
3.3. Thermal treatments in gettering ambients......Page 181
3.4. Internal getter......Page 183
3.5. Comparative analysis of gettering technique efficiency......Page 193
3.6. Mechanisms and models of gettering processes......Page 196
3.6.1. Interaction of point defects with a field of elastic stresses......Page 197
3.6.2. Electrical interaction of point defects......Page 201
3.6.4. Extracting the point defects into an external environment......Page 202
3.6.6. Models for diffusive redistribution of point defects in gettering......Page 203
4. Physical foundations for low–temperature gettering techniques......Page 211
4.1. Gettering effects during an abrasive and chemical treatment of crystal surfaces......Page 212
4.2. Structural changes in hydrostatically–compressed semiconductors......Page 234
4.2.1. Effects of hydrostatic compression on structural defects in crystals......Page 235
4.2.2. Effects of pressure on pores in solids......Page 238
4.2.3. Compression–induced structural changes experimentally observed in semiconductors......Page 240
4.3. Structural changes in microdefects and properties of silicon and silicon–based ultrasonically–irradiated structures......Page 265
4.4. Irradiation–stimulated gettering......Page 298
4.4.1. Irradiating crystals by accelerated ions......Page 299
4.4.2. Effects of irradiation on semiconducting structures......Page 318
4.4.3. Models for low–temperature gettering of irradiated structures......Page 343
Conclusion......Page 355
References......Page 356
A......Page 380
C......Page 381
D......Page 383
E......Page 385
F......Page 386
G......Page 387
I......Page 388
M......Page 389
P......Page 390
R......Page 391
S......Page 392
T......Page 393
V......Page 394
Z......Page 395
G......Page 396
M......Page 397
S......Page 398
Z......Page 399
