Germanium Silicon: Physics and Materials

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Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

Author(s): Robert Hull and John C. Bean (Eds.)
Series: Semiconductors and Semimetals 56
Edition: 1st
Publisher: Elsevier, Academic Press
Year: 1998

Language: English
Pages: iii-xi, 1-427

Content:
Edited by
Page iii

Copyright page
Page iv

List of Contributors
Page xi

Chapter 1 Growth Techniques and Procedures Original Research Article
Pages 1-48
John C. Bean

Chapter 2 Fundamental Mechanisms of Film Growth Original Research Article
Pages 49-100
Donald E. Savage, Feng Liu, Volkmar Zielasek, Max G. Lagally

Chapter 3 Misfit Strain and Accommodation in SiGe Heterostructures Original Research Article
Pages 101-167
R. Hull

Chapter 4 Fundamental Physics of Strained Layer GeSi: Quo Vadis? Original Research Article
Pages 169-223
M.J. Shaw, M. Jaws

Chapter 5 Optical Properties Original Research Article
Pages 225-292
Fernando Cerdeira

Chapter 6 Electronic Properties and Deep Levels in Germanium-Silicon Original Research Article
Pages 293-346
Steven A. Ringel, Patrick N. Grillot

Chapter 7 Optoelectronics in Silicon and Germanium Silicon Original Research Article
Pages 347-386
Joe C. Campbell

Chapter 8 Si1-yCy and Si1-x-yGexCy Alloy Layers Original Research Article
Pages 387-422
Karl Eberl, Karl Brunner, Oliver G. Schmidt

Index
Pages 423-427