Etching of III-V semiconductors: an electrochemical approach

Preface Contents List of symbols and abbreviations 1. Introduction Part I: Electrochemistry 2. Basic principles of semiconductor electrochemistry 2.1. Introduction 2.2. Charge and potential distribution at the semiconductor/electrolyte interface 2.3. Charge transfer reactions 2.4. Anodic dissolution of III-V semiconductors 2.5. Principle of electroless dissolution 2.6. Principle of chemical dissolution 2.7. Kinetic considerations in etching reactions References 3. Experimental considerations 3.1. Introduction 3.2. Electrochemicalmeasurements 3.2.1. Electrode preparation 3.2.2. Instrumentation 3.2.3. Flow-cell measurements 3.3. Etching experiments 3.3.1. Mask preparation and orientation 3.3.2. Etching conditions References 4. Anodic Dissolution of GaAs 4.1. Introduction 4.2. Kinetics of anodic dissolution 4.2.1. Introduction 4.2.2. Results 4.2.3. Discussion 4.2.4. Conclusions 4.3. Surface charging under oxide-free conditions 4.3.1. Introduction 4.3.2. Results 4.3.3. Discussion 4.3.4. Conclusions 4.4. Interface charging under oxide-forming conditions 4.4.1. Introduction 4.4.2. Results 4.4.3. Discussion 4.4.4. Conclusions References 5. Redox reactions at GaAs electrodes 5.1. Introduction 5.2. Reduction of Fe^{3+} and its complexes 5.2.1. Introduction 5.2.2. Results 5.2.3. Discussion 5.2.4. Conclusions 5.3. Reduction of Fe(CN)^{3-}_6 in alkaline solutions 5.3.1. Introduction 5.3.2. Results 5.3.3. Discussion 5.3.4. Conclusions 5.4. Hypochlorite reduction in alkaline solutions 5.4.1. Introduction 5.4.2. Results 5.4.3. Discussion 5.4.4. Conclusions 5.5. Hydrogen peroxide: reduction and chemical etching 5.5.1. Introduction 5.5.2. Results and discussion 5.5.3. A new model 5.5.4. Conclusions 5.6. The halogens: reduction and chemical etching 5.6.1. Introduction 5.6.2. Results 5.6.3. Discussion 5.6.4. Conclusions 5.6.5. Postscript 5.7. The electrochemistry of CrO_3-HF solutions 5.7.1. Introduction 5.7.2. Results 5.7.3. Discussion 5.7.4.Conclusions References 6. Reactions at InP electrodes 6.1. Introduction 6.2. VB and CB charge transfer reactions 6.2.1. Introduction 6.2.2. Results 6.2.3. Discussion 6.2.4. Conclusions 6.3. Electrochemistry and etching in HCl and HBr solutions 6.3.1. Introduction 6.3.2. Results 6.3.3. Discussion 6.3.4. Conclusions 6.4. Electrochemistry and etching in Br_2 solutions 6.4.1. Introduction 6.4.2. Results 6.4.3. Discussion 6.4.4. Conclusions References Part II: Practtical etching 7. Overview of etching mechanisms and kinetics of various etchant 7.1. Introduction 7.2. General considerations 7.2.1. Anodic dissolution 7.2.2. Electroless dissolution 7.2.3. Chemical dissolution 7.3. Etching Table References 8. Profile etching 8.1. Introduction 8.2. Kinetically-controlled etching profiles 8.2.1. Introduction 8.2.2. Results and discussion 8.3. Diffusion-controlled etching processes 8.3.1. Introduction 8.3.2. Results of mathematical modelling 8.3.3. Experimental confirmation 8.3.4. Cathodic protection of crystallographic facets 8.4. Intermediate etching profiles 8.4.1. Introduction 8.4.2. Results and discussion 8.5. Influence of native oxide layers on the etched profiles 8.5.1. Introduction 8.5.2. Results and discussion 8.6. Summary References 9. Polishing and defect-revealing 9.1. Introduction 9.2. Strategies for controlling surface morphology 9.2.1. Polishing 9.2.2. Defect-revealing 9.3. Results and discussion 9.3.1. Anodic dissolution 9.3.2. Electroless etching in the dark 9.3.3. Electroless etching under illumination 9.3.4. The CrO_3-HF system 9.4. Final remarks BookmarkTitle: References 10. Material-selective etching 10.1. Introduction 10.2. How to achieve selectivity 10.2.1. Anodic etching 10.2.2. Electroless etching 10.2.3. Chemical etching 10.2.4. Passivation 10.3. Results and discussion 10.3.1. Anodic etching 10.3.2. Electroless etching 10.3.3. Chemical etching 10.3.4. Passivation References Author index Subject index