This book presents the dispersion relation in heavily doped nano-structures. The materials considered are III-V, II-VI, IV-VI, GaP, Ge, Platinum Antimonide, stressed, GaSb, Te, II-V, HgTe/CdTe superlattices and Bismuth Telluride semiconductors. The dispersion relation is discussed under magnetic quantization and on the basis of carrier energy spectra. The influences of magnetic field, magneto inversion, and magneto nipi structures on nano-structures is analyzed. The band structure of optoelectronic materials changes with photo-excitation in a fundamental way according to newly formulated electron dispersion laws. They control the quantum effect in optoelectronic devices in the presence of light. The measurement of band gaps in optoelectronic materials in the presence of external photo-excitation is displayed. The influences of magnetic quantization, crossed electric and quantizing fields, intense electric fields on the on the dispersion relation in heavily doped semiconductors and super-lattices are also discussed. This book contains 200 open research problems which form the integral part of the text and are useful for graduate students and researchers. The book is written for post graduate students, researchers and engineers.
Author(s): Kamakhya Prasad Ghatak (auth.)
Series: Springer Tracts in Modern Physics 265
Edition: 1
Publisher: Springer International Publishing
Year: 2016
Language: English
Pages: LV, 625
Tags: Semiconductors; Nanotechnology; Microwaves, RF and Optical Engineering; Nanoscale Science and Technology; Solid State Physics
Front Matter....Pages i-lv
Front Matter....Pages 1-1
The DRs in Low Dimensional HD Systems in the Presence of Magnetic Field....Pages 3-113
Front Matter....Pages 115-115
The DRs in Ultrathin Films (UFs) of Heavily Doped (HD) Non-parabolic Materials....Pages 117-208
The DRs in Quantum Wires (QWs) of Heavily Doped (HD) Non-parabolic Materials....Pages 209-241
The DRs in Quantum Dots (QDs) of Heavily Doped (HD) Non-parabolic Materials....Pages 243-268
The DR in Doping Superlattices of HD Non-parabolic Semiconductors....Pages 269-284
The DR in Accumulation and Inversion Layers of Non-parabolic Semiconductors....Pages 285-306
The DR in Heavily Doped (HD) Non-parabolic Semiconductors Under Magnetic Quantization....Pages 307-343
The DR in HDs Under Cross-Fields Configuration....Pages 345-364
The DR in Heavily Doped (HD) Non-parabolic Semiconductors Under Magneto-Size Quantization....Pages 365-378
The DR in Heavily Doped Ultra-thin Films (HDUFs) Under Cross-Fields Configuration....Pages 379-386
The DR in Doping Superlattices of HD Non-parabolic Semiconductors Under Magnetic Quantization....Pages 387-395
The DR in Accumulation and Inversion Layers of Non-parabolic Semiconductors Under Magnetic Quantization....Pages 397-406
Front Matter....Pages 407-407
The DR in QWHDSLs....Pages 409-432
The DR in Quantum Wire HDSLs....Pages 433-441
The DR in Quantum Dot HDSLs....Pages 443-449
The DR in HDSLs Under Magnetic Quantization....Pages 451-470
The DR in QWHDSLs Under Magnetic Quantization....Pages 471-477
Front Matter....Pages 479-479
The DR Under Photo Excitation in HD Kane Type Semiconductors....Pages 481-543
Front Matter....Pages 545-545
The DR Under Intense Electric Field in HD Kane Type Semiconductors....Pages 547-583
Few Related Applications....Pages 585-614
Front Matter....Pages 545-545
Conclusion and Scope for Future Research....Pages 615-618
Back Matter....Pages 619-625
