This monograph solely investigates the Debye Screening Length (DSL) in semiconductors and their nano-structures. The materials considered are quantized structures of non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V and Bismuth Telluride respectively. The DSL in opto-electronic materials and their quantum confined counterparts is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestions for the experimental determination of 2D and 3D DSL and the importance of measurement of band gap in optoelectronic materials under intense built-in electric field in nano devices and strong external photo excitation (for measuring photon induced physical properties) have also been discussed in this context. The influence of crossed electric and quantizing magnetic fields on the DSL and the DSL in heavily doped semiconductors and their nanostructures has been investigated. This monograph contains 150 open research problems which form the integral part of the text and are useful for both PhD students and researchers in the fields of solid-state sciences, materials science, nano-science and technology and allied fields in addition to the graduate courses in modern semiconductor nanostructures.
Author(s): Kamakhya Prasad Ghatak, Sitangshu Bhattacharya (auth.)
Series: Springer Tracts in Modern Physics 255
Edition: 1
Publisher: Springer International Publishing
Year: 2014
Language: English
Pages: 385
Tags: Semiconductors;Optical and Electronic Materials;Solid State Physics;Nanotechnology;Nanoscale Science and Technology
Front Matter....Pages i-xxxiii
Front Matter....Pages 1-1
The DSL in Quantum Wells of Non-Parabolic Semiconductors....Pages 3-61
The DSL in NIPI Structures of Non-Parabolic Semiconductors....Pages 63-75
The DSL in Inversion Layers of Non-Parabolic Semiconductors....Pages 77-106
Front Matter....Pages 107-107
The DSL for III–V, Ternary and Quaternary Semiconductors Under External Photo-Excitation....Pages 109-131
The DSL for Ultra-Thin Films of III–V, Ternary and Quaternary Semiconductors Under External Photo-Excitation....Pages 133-149
The Opto-DSL in III–V, Ternary and Quaternary Semiconductors Under Magnetic Quantization....Pages 151-162
The Opto-DSL of III–V, Ternary and Quaternary Semiconductors Under Cross-Fields Configuration....Pages 163-176
Front Matter....Pages 177-177
The DSL for III–V, Ternary and Quaternary Semiconductors Intense Electric Field....Pages 179-211
Suggestion for Experimental Determinations of 2D and 3D DSLs and Few Related Applications....Pages 213-250
Conclusion and Scope for Future Research....Pages 251-254
Front Matter....Pages 255-255
DSL in Bulk Specimens of Non-Parabolic Materials....Pages 257-270
DSL in Non-Parabolic Semiconductors Under Magnetic Quantization....Pages 271-298
DSL in Compound Semiconductors and Their Nano-Structures Under Cross-Fields Configuration....Pages 299-320
DSL in Heavily Doped Compound Semiconductors....Pages 321-341
DSL in Super-Lattices of Heavily Doped Non-Parabolic Semiconductors Under Magnetic Quantization....Pages 343-375
Back Matter....Pages 377-385
