Charge and Spin Transport in Disordered Graphene-Based Materials

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This thesis presents an in-depth theoretical analysis of charge and spin transport properties in complex forms of disordered graphene. It relies on innovative real space computational methods of the time-dependent spreading of electronic wave packets. First a universal scaling law of the elastic mean free path versus the average grain size is predicted for polycrystalline morphologies, and charge mobilities of up to 300.000 cm2/V.s are determined for 1 micron grain size, while amorphous graphene membranes are shown to behave as Anderson insulators. An unprecedented spin relaxation mechanism, unique to graphene and driven by spin/pseudospin entanglement is then reported in the presence of weak spin-orbit interaction (gold ad-atom impurities) together with the prediction of a crossover from a quantum spin Hall Effect to spin Hall effect (for thallium ad-atoms), depending on the degree of surface ad-atom segregation and the resulting island diameter.

Author(s): Dinh Van Tuan (auth.)
Series: Springer Theses
Edition: 1
Publisher: Springer International Publishing
Year: 2016

Language: English
Pages: XVI, 153
Tags: Nanoscale Science and Technology; Optical and Electronic Materials; Surfaces and Interfaces, Thin Films

Front Matter....Pages i-xvi
Introduction....Pages 1-4
Electronic and Transport Properties of Graphene....Pages 5-34
The Real Space Order O(N) Transport Formalism....Pages 35-54
Transport in Disordered Graphene....Pages 55-113
Spin Transport in Disordered Graphene....Pages 115-139
Conclusions....Pages 141-142
Back Matter....Pages 143-153