This book provides readers with an overview of the fundamental definitions and features of Multiple-Valued Logic (MVL). The authors include a brief discussion of the historical development of MVL technologies, while the main goal of the book is to present a comprehensive review of different technologies that are being explored to implement multiple-valued or beyond-binary memory circuits and systems. The discussion includes the basic features, prospects, and challenges of each technology, while highlighting the significant works done on different branches of MVL memory architecture, such as sequential circuits, random access memory, Flash memory, etc.
Author(s): Zarin Tasnim Sandhie, Farid Uddin Ahmed, Masud H. Chowdhury
Series: Synthesis Lectures on Digital Circuits & Systems
Publisher: Springer
Year: 2022
Language: English
Pages: 109
City: Cham
Preface
About the Subject
About This Book
Organization of the Book
Acknowledgements
Contents
About the Authors
Abbreviations
List of Figures
List of Tables
1 Background and Future of Multiple Valued Logic
1.1 Introduction
1.2 What is Multiple-Valued Logic
1.3 Computational Advantages of MVL System
1.4 Historical Background
1.5 Scopes of MVL Technology
1.5.1 Arithmetic Circuit Design
1.5.2 Memory Circuit Design
1.5.3 Quantum Computing
1.5.4 High-Speed Signaling
1.5.5 Cloud Based Computing Platform
1.5.6 Other Applications of MVL System
1.6 Challenges of MVL System
1.7 Future Direction
1.8 Conclusion
References
2 Mathematical Representation of Multi Valued Logic
2.1 Definition and Signal Representation
2.2 Basic Algebraic Operators for MVL
2.3 Synthesis Technique of MVL
2.4 Conclusion
References
3 Overview of Different Technologies for Multiple-Valued Memory
3.1 Planar MOSFET Technology
3.1.1 Operating Principle
3.1.2 Analysis
3.2 Silicon on Insulator (SOI) and Fin Field Effect Transistor (FinFET)
3.2.1 Fully Depleted Silicon-on-Insulator (FDSOI)
3.2.2 Fin Field Effect Transistor (FinFET)
3.2.3 Analysis
3.3 Resonant Tunneling Diode (RTD) Technology
3.3.1 Operating Principle
3.3.2 Analysis
3.4 Single Electron Transistor (SET) Technology
3.4.1 Operating Principle
3.4.2 Analysis
3.5 Carbon Based Technologies: CNTFET and GNRFET
3.5.1 Operating Principle
3.5.2 Analysis
3.6 Memristor
3.6.1 Operating Principle
3.6.2 Analysis
3.7 Magnetic Tunnel Junction (MTJ)
3.7.1 Operating Principle
3.7.2 Analysis
3.8 Neuron Metal Oxide Semiconductor (Neuron-MOS)
3.8.1 Operating Principle
3.8.2 Analysis
3.9 Conclusion
References
4 MVL Sequential Circuits
4.1 Introduction
4.2 Ternary D-Latch
4.3 Ternary D Flip-Flop
4.3.1 Positive Edge Triggered D Flip-Flap-Flop
4.4 Analysis
4.5 Application of Ternary Sequential Circuits
4.6 Conclusion
References
5 MVL Random Access Memory
5.1 Introduction
5.2 Static Random-Access Memory (SRAM)
5.2.1 Design 1 of a Ternary SRAM
5.2.2 Design 2 of a Ternary SRAM
5.2.3 Analysis
5.3 Dynamic Random-Access Memory (DRAM)
5.3.1 Design 1 a Ternary DRAM
5.3.2 Design 2 a Ternary DRAM
5.3.3 Analysis
5.4 Multi-level Dynamic Random-Access Memory (MLDRAM)
5.4.1 MLDRAM Design Proposed by Gillingham
5.4.2 Analysis
5.5 Conclusion
References
6 MVL Flash Memory
6.1 Introduction
6.2 Floating Gate MOS (FGMOS)
6.3 ETOX Flash
6.4 NAND and NOR Flash Memory
6.5 Multi-level Memory Cell Concept
6.5.1 Working Principle of Multi-valued Flash Memory
6.5.2 Planar Versus Vertical NAND
6.6 Conclusion
References
7 Ternary Content Addressable Memory
7.1 Introduction
7.2 Operation of Content-Addressable Memory (CAM)
7.3 Binary Versus Ternary CAM
7.4 Analysis
References
