Basic semiconductor physics

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The new edition of this textbook presents a detailed description of basic semiconductor physics. The text covers a wide range of important phenomena in semiconductors, from the simple to the advanced. Four different methods of energy band calculations in the full band region are explained: local empirical pseudopotential, non-local pseudopotential, KP perturbation and tight-binding methods. The effective mass approximation and electron motion in a periodic potential, Boltzmann transport equation and deformation potentials used for analysis of transport properties are discussed. Further, the book examines experiments and theoretical analyses of cyclotron resonance in detail. Optical and transport properties, magneto-transport, two-dimensional electron gas transport (HEMT and MOSFET) and quantum transport are reviewed, while optical transition, electron-phonon interaction and electron mobility are also addressed. Energy and electronic structure of a quantum dot (artificial atom) are explained with the help of Slater determinants. The physics of semiconductor lasers is also described, including Einstein coefficients, stimulated emission, spontaneous emission, laser gain, double heterostructures, blue lasers, optical confinement, laser modes, and strained quantum well lasers, offering insights into the physics of various kinds of semiconductor lasers. In this third edition, energy band calculations in full band zone with spin-orbit interaction are presented, showing all the matrix elements and equipping the reader to prepare computer programs of energy band calculations. The Luttinger Hamiltonian is discussed and used to analyze the valence band structure. Numerical calculations of scattering rate, relaxation time, and mobility are presented for typical semiconductors, which are very helpful for understanding of transport. Energy band structures and effective masses of nitrides such as GaN, InN, AlN and their ternary alloys are discussed because they are very important materials for the blue light emission, and high power devices with and high frequency. Learning and teaching with this textbook is supported by problems and solutions in the end of the chapters. The book is written for bachelor and upper undergraduate students of physics and engineering.

Author(s): Chihiro Hamaguchi
Series: Graduate texts in physics
Edition: 3
Publisher: Springer International Publishing
Year: 2017

Language: English
Pages: XXI, 709
Tags: Semiconductors;Electronics;Electrical & Electronics;Engineering;Engineering & Transportation;Testing;Materials & Material Science;Engineering;Engineering & Transportation;Materials Science;Materials & Material Science;Engineering;Engineering & Transportation;Electricity;Electromagnetism;Physics;Science & Math;Science & Mathematics;Agriculture;Astronomy & Astrophysics;Biology & Life Sciences;Chemistry;Earth Sciences;Environmental Studies;Mathematics;Mechanics;Physics;New, Used & Rental Textbooks;

Front Matter ....Pages i-xxi
Energy Band Structures of Semiconductors (Chihiro Hamaguchi)....Pages 1-63
Cyclotron Resonance and Energy Band Structures (Chihiro Hamaguchi)....Pages 65-123
Wannier Function and Effective Mass Approximation (Chihiro Hamaguchi)....Pages 125-151
Optical Properties 1 (Chihiro Hamaguchi)....Pages 153-204
Optical Properties 2 (Chihiro Hamaguchi)....Pages 205-264
Electron–Phonon Interaction and Electron Transport (Chihiro Hamaguchi)....Pages 265-364
Magnetotransport Phenomena (Chihiro Hamaguchi)....Pages 365-413
Quantum Structures (Chihiro Hamaguchi)....Pages 415-545
Light Emission and Laser (Chihiro Hamaguchi)....Pages 547-634
Answers for Problems (Chihiro Hamaguchi)....Pages 635-661
Back Matter ....Pages 663-709