Author(s): Raymond Dingle (Eds.)
Series: Semiconductors and Semimetals 24
Publisher: Elsevier, Academic Press
Year: 1987
Language: English
Pages: iii-xi, 1-511
Content:
Volume Editor
Page iii
Copyright page
Page iv
Preface
Pages ix-xi
Raymond Dingle
Chapter 1 Fundamental Properties of III-V Semiconductor Two-Dimensional Quantized Structures: The Basis for Optical and Electronic Device Applications Original Research Article
Pages 1-133
C. Weisbuch
Chapter 2 Factors Affecting the Performance of (Al,Ga)As/GaAs and (Al,Ga)As/InGaAs Modulation-Doped Field-Effect Transistors: Microwave and Digital Applications Original Research Article
Pages 135-201
H. Morkoç, H. Unlu
Chapter 3 Two-Dimensional Electron Gas FETs: Microwave Applications Original Research Article
Pages 203-247
Nuyen T. Linh
Chapter 4 Ultra-High-Speed HEMT Integrated Circuits Original Research Article
Pages 249-278
M. Abe, T. Mimura, K. Nishiuchi, A. Shibatomi, M. Kobayashi, T. Misugi
Chapter 5 Nonlinear Optical Properties of Multiple Quantum Well Structures for Optical Signal Processing Original Research Article
Pages 279-318
D.S. Chemla, D.A.B. Miller, P.W. Smith
Chapter 6 Graded-Gap and Superlattice Devices by Bandgap Engineering Original Research Article
Pages 319-395
Federico Capasso
Chapter 7 Quantum Confinement Heterostructure Semiconductor Lasers Original Research Article
Pages 397-458
W.T. Tsang
Chapter 8 Principles and Applications of Semiconductor Strained-Layer Superlattices Original Research Article
Pages 459-503
G.C. Osboum, P.L. Gourley, I.J. Fritz, R.M. Biefeld, L.R. Dawson, T.E. Zipperian
Index
Pages 505-511
