ADVANCED ULTRA LOW-POWER SEMICONDUCTOR DEVICES
Written and edited by a team of experts in the field, this important new volume broadly covers the design and applications of metal oxide semiconductor field effect transistors.
This outstanding new volume offers a comprehensive overview of cutting-edge semiconductor components tailored for ultra-low power applications. These components, pivotal to the foundation of electronic devices, play a central role in shaping the landscape of electronics. With a focus on emerging low-power electronic devices and their application across domains like wireless communication, biosensing, and circuits, this book presents an invaluable resource for understanding this dynamic field.
Bringing together experts and researchers from various facets of the VLSI domain, the book addresses the challenges posed by advanced low-power devices. This collaborative effort aims to propel engineering innovations and refine the practical implementation of these technologies. Specific chapters delve into intricate topics such as Tunnel FET, negative capacitance FET device circuits, and advanced FETs tailored for diverse circuit applications.
Beyond device-centric discussions, the book delves into the design intricacies of low-power memory systems, the fascinating realm of neuromorphic computing, and the pivotal issue of thermal reliability. Authors provide a robust foundation in device physics and circuitry while also exploring novel materials and architectures like transistors built on pioneering channel/dielectric materials. This exploration is driven by the need to achieve both minimal power consumption and ultra-fast switching speeds, meeting the relentless demands of the semiconductor industry. The book’s scope encompasses concepts like MOSFET, FinFET, GAA MOSFET, the 5-nm and 7-nm technology nodes, NCFET, ferroelectric materials, subthreshold swing, high-k materials, as well as advanced and emerging materials pivotal for the semiconductor industry’s future.
Author(s): Shubham Tayal, Abhishek Kumar Upadhyay, Shiromani Balmukund Rahi, and Young Suh Song
Publisher: Wiley
Year: 2022
Language: English
Pages: 313
Cover
Table of Contents
Series Page
Title Page
Copyright
Preface
1 Subthreshold Transistors: Concept and Technology
1.1 Introduction
1.2 Major Sources of Leakage and Possible Methods of Prevention
1.3 Possibilities and Challenges
1.4 Conclusions
References
2 Introduction to Conventional MOSFET and Advanced Transistor TFET
2.1 Introduction
2.2 Device Structure
2.3 TFET Principle of Operation
2.4 Material Characterization
2.5 Characteristics of TFET
2.6 Comparison of OFF-State Characteristics
2.7 Phonon Scattering’s Impact
2.8 ON-State Performance Comparison
2.9 Performance Analysis Based on Intrinsic Delay
2.10 Bandgap’s Effect on Device Performance
2.11 MOSFET and TFET Scaling Behaviour
2.12 Surface Potential of an N-TFET and N-MOSFET
2.13 Professional Advantages of TFET over MOSFET
2.14 Conclusion
References
3 Operation Principle and Fabrication of TFET
3.1 Introduction
3.2 Planar MOSFET’s Limitations
3.3 Demand for Low Power Operation
3.4 TFET: Operation Principle of TFET
3.5 TFET: Recent Design Issues in TFET
3.6 TFET: Modeling and Application
3.7 TFET: Fabrication Perspective
3.8 TFET: Applications and Future of Low-Power Electronics
3.9 Expected Challenges in Replacing MOSFET with TFET
3.10 Conclusion
References
4 Mathematical Modeling of TFET and Its Future Applications: Ultra Low-Power SRAM Circuit and III-IV TFET
4.1 Introduction
4.2 Modeling Approaches
4.3 Structure
4.4 Applications of Tunnel Field-Effect Transistor
4.5 Road Ahead for Tunnel Field Effect Transistors
References
5 Analysis of Channel Doping Variation on Transfer Characteristics to High Frequency Performance of F-TFET
5.1 Introduction
5.2 Simulated Device Structure and Parameters
5.3 DC Characteristics
5.4 Analysis of Analog/RF FOMs
5.5 Conclusion
References
6 Comparative Study of Gate Engineered TFETs and Optimization of Ferroelectric Heterogate TFET Structure
6.1 Introduction
6.2 Study of Different TFET Structures
6.3 Proposed Structure
6.4 Results and Discussion
6.5 Conclusion
6.6 Future Scope
References
7 State of the Art Tunnel FETs for Low Power Memory Applications
7.1 Static Random Access Memory
7.2 Performance Parameters of SRAM Cell
7.3 TFET-Based SRAM Cell Design
7.4 Conclusion
References
8 Epitaxial Layer-Based Si/SiGe Hetero-Junction Line Tunnel FETs: A Physical Insight
8.1 Fundamental Limitation of CMOS: Tunnel FETs
8.2 Working Principle of Tunnel FET
8.3 Point and Line TFETs: Tunneling Direction
8.4 Perspective of Line TFETs
8.5 Analytical Models of Line TFETs
8.6 Line TFETs for Analog & Digital Circuits Design
8.7 Other Steep Slope Devices
8.8 Conclusion
References
9 Investigation of Thermal Performance on Conventional and Junctionless Nanosheet Field Effect Transistors
9.1 Introduction
9.2 Device Simulation Details
9.3 Results and Discussion
9.4 Conclusion
Acknowledgement
References
10 Introduction to Newly Adopted NCFET and Ferroelectrics for Low-Power Application
10.1 Introduction
10.2 NCFET and Its Design Constraints
10.3 NCFET for Low-Power Applications
10.4 Summary
References
11 Application of Ferroelectrics: Monolithic-3D Inference Engine with IGZO Based Ferroelectric Thin Film Transistor Synapses
11.1 Introduction
11.2 Ferroelectricity in Hafnium Oxide
11.3 IGZO Based Ferroelectric Thin Film Transistor
11.4 Applications in Neural Networks
11.5 Conclusion
References
12 Radiation Effects and Their Impact on SRAM Design: A Comprehensive Survey with Contemporary Challenges
12.1 Introduction
12.2 Literature Survey
12.3 Impact of Radiation Effects on Sram Cells
12.4 Results and Discussion
12.5 Conclusion
Declarations
References
13 Final Summary and Future of Advanced Ultra Low Power Metal Oxide Semiconductor Field Effect Transistors
13.1 Introduction
13.2 Challenges in Future Ultra-Low Power Semiconductors
13.3 Conclusion
References
Index
Also of Interest
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