Advanced Physics of Electron Transport in Semiconductors and Nanostructures

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This textbook is aimed at second-year graduate students in Physics, Electrical Engineer­ing, or Materials Science. It presents a rigorous introduction to electronic transport in solids, especially at the nanometer scale.Understanding electronic transport in solids requires some basic knowledge of Ham­iltonian Classical Mechanics, Quantum Mechanics, Condensed Matter Theory, and Statistical Mechanics. Hence, this book discusses those sub-topics which are required to deal with electronic transport in a single, self-contained course. This will be useful for students who intend to work in academia or the nano/ micro-electronics industry.Further topics covered include: the theory of energy bands in crystals, of second quan­tization and elementary excitations in solids, of the dielectric properties of semicon­ductors with an emphasis on dielectric screening and coupled interfacial modes, of electron scattering with phonons, plasmons, electrons and photons, of the derivation of transport equations in semiconductors and semiconductor nanostructures somewhat at the quantum level, but mainly at the semi-classical level. The text presents examples relevant to current research, thus not only about Si, but also about III-V compound semiconductors, nanowires, graphene and graphene nanoribbons. In particular, the text gives major emphasis to plane-wave methods applied to the electronic structure of solids, both DFT and empirical pseudopotentials, always paying attention to their effects on electronic transport and its numerical treatment. The core of the text is electronic transport, with ample discussions of the transport equations derived both in the quantum picture (the Liouville-von Neumann equation) and semi-classically (the Boltzmann transport equation, BTE). An advanced chapter, Chapter 18, is strictly related to the ‘tricky’ transition from the time-reversible Liouville-von Neumann equation to the time-irreversible Green’s functions, to the density-matrix formalism and, classically, to the Boltzmann transport equation. Finally, several methods for solving the BTE are also reviewed, including the method of moments, iterative methods, direct matrix inversion, Cellular Automata and Monte Carlo. Four appendices complete the text.

Author(s): Massimo V. Fischetti, William G. Vandenberghe (auth.)
Series: Graduate Texts in Physics
Edition: 1
Publisher: Springer International Publishing
Year: 2016

Language: English
Pages: XXIII, 474
Tags: Semiconductors;Optical and Electronic Materials;Electrical Engineering;Nanotechnology;Physical Chemistry;Nanoscale Science and Technology

Front Matter....Pages i-xxiii
Front Matter....Pages 1-1
Canonical Quantization of Physical Systems....Pages 3-20
The Periodic Table, Molecules, and Bonds....Pages 21-36
Front Matter....Pages 37-37
Crystals: Lattice, Reciprocal Lattice, and Symmetry....Pages 39-55
The Electronic Structure of Crystals: Theoretical Framework....Pages 57-69
The Electronic Structure of Crystals: Computational Methods....Pages 71-97
Density Functional Theory....Pages 99-110
* Electronic Structure of Low-Dimensionality Systems....Pages 111-162
Single-Electron Dynamics in Crystals....Pages 163-183
Front Matter....Pages 185-185
Elementary Excitations in Solids....Pages 187-214
Elements of Quantum Statistical Mechanics....Pages 215-221
Dielectric Properties of Semiconductors....Pages 223-251
Front Matter....Pages 253-253
Generalities About Scattering in Semiconductors....Pages 255-268
Electron—Phonon Interactions....Pages 269-314
Scattering with Ionized Impurities....Pages 315-325
Coulomb Interactions Among Free Carriers....Pages 327-349
Radiative Processes: The Dipole Approximation....Pages 351-357
Front Matter....Pages 359-359
Overview of Quantum-Transport Formalisms....Pages 361-380
*From Liouville—von Neumann to Boltzmann: The Semiclassical Limit....Pages 381-406
Solution Methods for Semiclassical Transport....Pages 407-436
Back Matter....Pages 437-474