This book focuses on advanced optical spectroscopy techniques for the characterization of cutting-edge semiconductor materials. It covers a wide range of techniques such as Raman, infrared, photoluminescence, and cathodoluminescence (CL) spectroscopy, including an introduction to their physical fundamentals and best operating principles. Aimed at professionals working in the research and development of semiconductors and semiconductor materials, this book looks at a broad class of materials such as silicon and silicon dioxide, nano-diamond thin films, quantum dots, and gallium oxide. In addition to the spectroscopic techniques covered, this book features a chapter devoted to the use of a scanning electron transmission microscope as an excitation source for CL spectroscopy. Written by a practicing industry expert in the field, this book is an ideal source of reference and best-practices guide for physicists, as well as materials scientists and engineers involved in the area of spectroscopy of semiconductor materials. Further, this book introduces the cutting-edge spectroscopy such as optical photothermal IR and Raman spectroscopy or terahertz time-domain spectroscopy (THz-TDS) etc.
Author(s): Masanobu Yoshikawa
Publisher: Springer
Year: 2023
Language: English
Pages: 226
City: Cham
Preface
Contents
About the Author
1 Introduction
1.1 Introduction
2 Raman and Infrared (IR) Spectroscopy
2.1 Principle of Raman Spectroscopy
2.1.1 Crystal Orientation Characterization
2.1.2 Stress Characterization
2.2 Principle of IR Spectroscopy
2.3 Raman Instrumentations
2.3.1 Excitation Source
2.3.2 Grating [20, 21]
2.3.3 Spectrometer [21]
2.3.4 Detector
2.4 IR Instrumentations
2.4.1 IR Source
2.4.2 Michelson Interferometer
2.4.3 Detector
2.4.4 Microscopy and Imaging
References
3 Photoluminescence (PL) Spectroscopy
3.1 PL Imaging Technique
References
4 Overview of Cathodoluminescence (CL) Spectroscopy
4.1 Introduction
4.2 Principle of CL Spectroscopy
4.3 Instrumentations
4.3.1 Excitation Source
4.3.2 Optical System
4.3.3 Detector
4.3.4 Cryostat
4.3.5 Comparison of CL and Scanning Near-Field Optical Microscopy (SNOM)-PL Spectroscopy
References
5 Applications of Raman, IR, and CL Spectroscopy
5.1 Silicon and Silicon Dioxide (SiO2)
5.1.1 Silicon
5.1.2 Silicon Dioxide
5.2 Strained Silicon
5.3 Silicon Processing of LSI Devices
5.4 Gallium Arsenide and Related Devices
5.5 Indium Phosphate and Related Devices
5.6 Wide-Gap Semiconductors: Gallium Nitride and Related Materials
5.7 Wide-Gap Semiconductors: Silicon Carbide and Related Materials
5.7.1 Silicon Carbide
5.7.2 Silicon Thermal Oxide Film (SiO2)
5.8 Wide-Gap Semiconductor: Zinc Oxide
5.9 Wide-Gap Semiconductor: Diamond
5.9.1 Diamond Films
5.9.2 Fano Effect in Diamond
5.9.3 Nano-diamond
5.9.4 Amorphous Diamond
5.9.5 Resonant Raman Scattering from Si- and N-doped a-C:H Films
5.9.6 Infrared Spectra of a-C:H Films
5.9.7 CL of Diamond
5.10 Next-Generation Semiconductor: Ga2O3
5.11 Quantum Dots
References
6 STEM-CL
6.1 Setup
6.2 Application
6.2.1 Crystalline Characterisation of GaN Flake by STEM-CL
6.2.2 Crystalline Characterisation of Single Crystalline ZnO Nanowire by STEM-CL
6.2.3 Localised Surface Plasmon of Nanometre-Sized Metal by STEM-EELS and STEM-CL Spectroscopy
References
7 Topics
7.1 DUV, UV, and NIR Raman Spectroscopy
7.2 AFM-Raman and AFM-IR Spectroscopy
7.2.1 AFM-Raman Spectroscopy
7.2.2 AFM-IR Spectroscopy
7.2.3 Optical Photothermal IR and Raman Spectroscopy
7.3 Terahertz Time-Domain Spectroscopy (THz-TDS)
7.4 SIMS-OES/-CL Spectroscopy
7.5 Time-Resolved CL Spectroscopy
References
Paper List
Proceeding
Index
