RF Circuits for 5G Applications: Designing with mmWave Circuitry

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RF CIRCUITS FOR 5G APPLICATIONS

This book addresses FinFET-based analog IC designing for fifth generation (5G) communication networks and highlights the latest advances, problems, and challenges while presenting the latest research results in the field of mmwave integrated circuits designing.

The wireless communication sector is experiencing exponential expansion, particularly in the areas of mobile data and the 5G mobile network, creating fresh market possibilities for designing the integrated circuits (ICs) needed in the industry. Drawing from scientific literature and practical realization, this book explores FinFET-based analog IC designing for 5G communication networks and considers the latest breakthroughs and obstacles. It also presents the recent research trends and future roadmaps for the 5G communication circuits.

RF Circuits for 5G Applications includes design guidelines to be considered when designing these circuits and detrimental scaling effects of the same. In addition, to enhance the usability of this book, the editors have included real-time problems in RFIC designing and case studies from experimental results, as well as clearly demarcated design guidelines for the 5G communication ICs designing.

Audience

The primary target audience includes researchers, postgraduate students, and industry professionals pursuing specializations in RF engineering, electronics engineering, electrical engineering, information, and communication technology.

Author(s): Sangeeta Singh, Rajeev Kumar Arya, B. C. Sahana, Ajay Kumar Vyas
Publisher: Wiley-Scrivener
Year: 2023

Language: English
Pages: 338
City: Beverly

Cover
Title Page
Copyright Page
Contents
Preface
Part I: 5G Communication
Chapter 1 Needs and Challenges of the 5th Generation Communication Network
1.1 Introduction
1.1.1 What is 5G and Do We Need 5G?
1.1.2 A Brief History of Gs
1.2 mmWave Spectrum, Challenges, and Opportunities
1.3 Framework Level Requirements for mmWave Wireless Links
1.4 Circuit Aspects
1.5 Outline of the Book
Acknowledgement
References
Chapter 2 5G Circuits from Requirements to System Models and Analysis
2.1 RF Requirements Governed by 5G System Targets
2.2 Radio Spectrum and Standardization
2.3 System Scalability
2.4 Communication System Model for RF System Analysis
2.5 System-Level RF Performance Model
2.5.1 Transmitter, Receiver, Antenna Array and Transceiver Architectures for RF and Hybrid Beamforming
2.6 Radio Propagation and Link Budget
2.6.1 Radio Propagation Model
2.6.2 Link Budgeting
2.7 Multiuser Multibeam Analysis
2.8 Conclusion
Acknowledgement
References
Chapter 3 Millimetre-Wave Beam-Space MIMO System for 5G Applications
3.1 Introduction
3.2 Beam-Space Massive MIMO System
3.2.1 System Model
3.2.2 Saleh-Valenzuela Channel Model
3.3 Array Response Vector
3.3.1 mmWave Beam-Space Massive (mWBSM)-MIMO System
3.4 Discrete Lens Antenna Array
3.5 Beam Selection Algorithm
3.6 Mean Sum Assignment-Based Beam User Association
3.6.1 Performance Evaluation
3.7 Conclusion
References
Part II: Oscillator & Amplifier
Chapter 4 Gain-Bandwidth Enhancement Techniques for mmWave Fully-Integrated Amplifiers
4.1 RLC Tank
4.1.1 RC Low-Pass (LP) Filter
4.1.2 RLC Band-Pass (BP) Filter
4.2 Coupled Resonators
4.2.1 Bode-Fano (B-F) Limit
4.2.2 Capacitively Coupled Resonators
4.2.3 Inductively Coupled Resonators
4.2.4 Magnetically Coupled Resonators
4.2.5 Magnetically and Capacitive Coupled Resonator
4.2.6 Coupled Resonators Comparison
4.3 Resonators Based on the Transformers
4.3.1 On the Parasitic Interwinding Capacitance
4.3.2 Effect of Unbalanced Capacitive Terminations
4.3.3 Frequency Response Equalization
4.3.4 On the Parasitic Magnetic Coupling in Multistage Amplifiers
4.3.5 Extension to Impedance Transformation
4.3.6 On the kQ Product
4.3.7 Transformer-Based Power Dividers (PDs)
4.3.8 Transformer-Based Power Combiners (PCs)
4.4 Conclusion
Acknowledgments
References
Chapter 5 Low-Noise Amplifiers
5.1 Introduction
5.2 Basics of RFIC
5.2.1 Voltage Gain in dB
5.2.2 Power Gain in dB
5.2.3 Issues in RF Design
5.3 Structure of MOSFET
5.4 Bandwidth Estimation Techniques
5.5 Noise
5.5.1 Noise in MOSFET
5.6 Different Topologies of LNA
Conclusion
Acknowledgement
References
Chapter 6 Mixer Design
6.1 Introduction
6.2 Properties
6.3 Diode Mixer
6.4 Transistor Mixer
6.5 Conclusion
Acknowledgement
References
Chapter 7 RF LC VCOs Designing
7.1 Introduction
7.1.1 Basic VCO Models
7.1.2 Phase Noise
7.1.3 Flicker Noise
7.1.4 Distributed Oscillators
7.2 Tuning Extension Techniques
7.2.1 Varactor
7.2.2 Switched Capacitors
7.2.3 Switched Inductors
7.2.4 Switched TLs
7.2.5 4th Order Tanks and Other Techniques
7.3 Conclusion
Acknowledgement
References
Chapter 8 RF Power Amplifiers
8.1 Specification
8.1.1 Efficiency
8.1.2 Generic Amplifier Classes
8.1.3 Heating
8.1.4 Linearity
8.1.5 Ruggedness
8.2 Bipolar PA Design
8.3 CMOS Power Amplifier Design
8.3.1 Performance Parameters
8.3.1.1 Linearity
8.3.1.2 Gain
8.3.1.3 Efficiency
8.3.1.4 Output Power
8.3.1.5 Power Consumption
8.3.2 Drawbacks of CMOS Power Amplifier
8.3.3 Design of CMOS Power Amplifier
8.3.3.1 Common Cascode PA Design
8.3.3.2 Self-Bias Cascode PA Design
8.3.3.3 Differential Cascode PA Design
8.3.3.4 Power Combining PA Design
8.4 Linearization Principles: Predistortion Technique, Phase-Correcting Feedback, Envelope Elimination and Restoration (EER), Cartesian Feedback
8.4.1 Predistortion Linearization Technique
8.4.2 Phase Correcting Feedback Technique
8.4.3 Cartesian Feedback Technique
8.4.4 Envelope Elimination and Restoration Technique
Acknowledgement
References
Chapter 9 RF Oscillators
9.1 Introduction
9.2 Specifications
9.2.1 Frequency and Tuning
9.2.2 Tuning Constant and Linearity
9.2.3 Power Dissipation
9.2.4 Phase to Noise Ratio
9.2.5 Reciprocal Mixing
9.2.6 Signal to Noise Degradation of FM Signals Spurious Emission
9.2.7 Harmonics, I/Q Matching, Technology and Chip Area
9.3 LC Oscillators
9.3.1 Frequency, Tuning and Phase Noise Frequency Tuning Phase Noise to Carrier Ratio
9.3.2 Topologies
9.3.3 NMOS Only Cross-Coupled Structure
9.3.4 RC Oscillators
9.4 Design Examples
9.4.1 830 MHz Monolithic LC Oscillator Circuit Design Measurements
9.4.2 A 10 GHz I/Q RC Oscillator with Active Inductors
9.5 Conclusion
Acknowledgement
References
Part III: RF Circuit Applications
Chapter 10 mmWave Highly-Linear Broadband Power Amplifiers
10.1 Basics of PAs
10.1.1 Single Transistor Amplifier
10.1.2 Trade-Offs Among Power Amplifier Design Parameters (P0, PAE and Linearity)
10.1.3 Harmonic Terminations and Switching Amplifiers
10.1.4 Challenges at Millimeter-Wave
10.2 Millimeter Wave-Based AB Class PA
10.2.1 Efficiency at Power Back-Off
10.2.2 Sources of AM-PM Distortion
10.2.3 Distortion Cancellation Techniques
10.2.3.1 Input PMOS Varactors
10.2.3.2 Complementary N-PMOS Amplifier
10.2.3.3 Degeneration Inductance
10.2.3.4 Harmonic Traps
10.3 Design Example: A Highly Linear Wideband PA in 28 nm CMOS
10.3.1 Transformer-Based Output Combiner and Inter-Stage Power Divider
10.3.2 More on the kQ Product
10.4 Conclusion
Acknowledgments
References
Chapter 11 FinFET Process Technology for RF and Millimeter Wave Applications
11.1 Evaluation of FinFET Technology
11.1.1 Steps of Fabrication and Process Flow of FinFET Technology
11.1.2 Digital Performance
11.1.3 Analog/RF Performance
11.2 Distinct Properties of FinFET
11.2.1 Performance with Transistor Scaling
11.2.2 Nonlinear Gate Resistance by Three Dimensional Structure
11.2.3 Self-Heating Effect in FinFETs
11.3 Assessment of FinFET Technology for RF/mmWave Applications
11.3.1 RF Performance
13.3.1.1 Parasitic Extraction
11.3.2 Noise Performance
11.3.3 Noise Matching with Gain at the mmWave Frequency
11.4 Design Process of FinFET for RF/mmWave Performance Optimization
11.4.1 Cascaded Chain Design Consideration for Wireless System
11.4.2 Optimization of Noise Figure with Gmax for LNA Within Self-Heat Limit
11.4.3 Gain Per Power Efficiency
11.4.4 Linearity for Gain and Power Efficiency
11.4.5 Neutralization for mmWave Applications
References
Chapter 12 Pre-Distortion: An Effective Solution for Power Amplifier Linearization
12.1 Introduction
12.2 Standard Measures of Nonlinearity of Power Amplifier
12.2.1 Gain Compression Point (1 dB)
12.2.2 Harmonic and Intermodulation Distortion (IMD)
12.2.3 Third-Order Intercept Point (TOI)
12.2.4 AM/AM and AM/PM Distortion
12.2.5 Adjacent Channel Power Ratio (ACPR)
12.2.6 Error Vector Magnitude (EVM)
12.3 What is Linearization?
12.3.1 Feed Forward Linearization
12.3.2 Feedback Linearization
12.3.3 Pre-Distortion Linearization
12.4 Example of Analog Pre-Distortion-Based Class EFJ Power Amplifier
Conclusion and Future Scope
References
Chapter 13 Design of Control Circuit for Mitigation of Shadow Effect in Solar Photovoltaic System
13.1 Introduction
13.2 Proposed Methodology
13.3 Results and Discussion
13.4 Conclusion
Acknowledgement
References
Part IV: RF Circuit Modeling
Chapter 14 HBT High-Frequency Modeling and Integrated Parameter Extraction
14.1 HBT High-Frequency Modeling and Integrated Parameter Extraction
14.2 High-Frequency HBT Modeling
14.2.1 DC and Small Signal Models
14.2.2 Linearized T-Model
14.2.3 Linearized Hybrid ð model
14.3 Integrated Parameters Extraction
14.3.1 Formulation of Integrated Parameter Extraction
14.3.2 Optimization of Model
14.4 Noise Model Validation
14.5 Parameters Extraction of an HBT Model
Acknowledgement
References
Chapter 15 Non-Linear Microwave Circuit Design Using Multi-Harmonic Load-Pull Simulation Technique
15.1 Introduction
15.2 Multi-Harmonic Load-Pull Simulation Using Harmonic Balance
15.2.1 Formulation of Multi-Harmonic Load-Pull Simulation
15.2.2 Systematic Design Procedure
15.3 Application of Multiharmonic Load-Pull Simulation
15.3.1 Narrowband Power Amplifier Design
15.3.2 Frequency Doubler Design
References
Chapter 16 Microwave RF Designing Concepts and Technology
16.1 Introduction
16.1.1 Gain
16.1.2 Noise
16.1.3 Non Linearity
16.1.4 Sensitivity
16.2 Microwave RF Device Technology and Characterization
16.2.1 Characterization and Modeling
16.2.2 Modeling
16.2.3 Cut-Off Frequency
16.2.4 Maximum Oscillation Frequency
16.2.5 Input Limited Frequency
16.2.6 Output Limited Frequency
16.2.7 Maximum Available Frequency
16.2.8 Technology Choices
16.2.9 Double Poly Devices
16.3 Passive Components
16.3.1 Resistors
16.3.2 Capacitors
16.3.3 Inductors
Conclusion
Acknowledgement
References
Index
EULA