There have been many recent developments in the physics and materials science of Mott insulators, especially their recognition as emergent materials for important and innovative device applications such as information processing and storage, and the possibilities of even further applications in optical and thermal switches, thermo-chromic devices, gas sensors and even solar cell applications. Aimed at advanced undergraduate students of physics, chemistry, materials science, and electrical and electronics engineering, this book introduces the subject and reviews present knowledge in the field, enabling students and researchers to get acquainted with this very interesting and emerging area of science and technology. Professional researchers in academic institutions and industries already engaged in the programmes of correlated electron materials and devices will also find this title of use.
Author(s): Sindhunil Barman Roy
Edition: 1ed
Publisher: IOP Publishing
Year: 2019
Language: English
Pages: 375
City: Bristol, UK
Tags: mott insulator
PRELIMS.pdf
Preface
Author biography
Sindhunil Barman Roy
Symbols
Introduction
References
CH001.pdf
Chapter 1 Electrons in crystalline solids
1.1 Periodic structure of solids and Bragg scattering
1.2 The direct lattice and the reciprocal lattice
1.3 Metallic solid: a container of free electron gas
1.3.1 Drude model
1.3.2 Pauli exclusion principle, Fermi electron gas and quantum statistical mechanics of electrons
1.3.3 Sommerfeld model
1.3.4 Inadequacies of the Drude and Sommerfeld models
1.4 Electron waves in the periodic ionic-potential of a solid: Bloch’s theorem
1.5 Independent electron approximation and electronic band structure
1.6 Nearly free electron model versus tight binding model
1.7 Quantum chemistry and electron theory of solids
1.8 Methods for calculating electron band structure
1.9 Metals, insulators and semiconductors
1.10 Peierls transition and charge density wave
1.11 Effects of static disorder: Anderson localization
Further reading
Self-assessment questions and exercises
References
CH002.pdf
Chapter 2 Electron–electron interaction in crystalline solids
2.1 Electron–electron interaction in metals; Hartree–Fock theory
2.2 Hartree–Fock theory of free electrons
2.3 Exchange hole, correlation hole and pair distribution function
2.4 Exchange energy and correlation energy in the electron gas
2.5 Screening in the electron gas
2.6 Hartree–Fock–Slater method and density functional theory
2.7 Fermi liquid theory in metals
2.8 Slater insulator
Further reading
Self-assessment questions and exercises
References
CH003.pdf
Chapter 3 Mott insulators and related phenomena: a basic introduction
3.1 Localized framework of solid state
3.2 Interacting electron gas: Wigner crystallization and Mott insulating state
3.3 Mott insulator: towards a formal definition
3.4 Pair distribution function and magnetic moments
3.5 Mott–Hubbard insulator
3.6 Theoretical approaches in Mott physics
3.7 Mott–Heisenberg insulator
3.8 Multi-band Mott insulator
3.9 Charge transfer insulator
3.10 Comparison between band-insulator, Mott-insulator and charge transfer insulator
3.11 Mott–Anderson insulator
3.12 Relativistic Mott insulator
3.13 Excitonic insulator
Further reading
Self-assessment questions and exercises
References
CH004.pdf
Chapter 4 Mott physics and magnetic insulators
4.1 Anderson superexchange and magnetic insulators
4.2 Case studies of antiferromagnetic insulators: manganese monoxide and nickel monoxide
4.3 Double exchange mechanism in mixed-valence systems La1−xSrxMnO3 and Fe3O4
4.3.1 La1−xSrxMnO3
4.3.2 Magnetite-Fe3O4
4.4 Nuclear fuel materials: uranium dioxide and plutonium
4.5 Mott physics of molecular solid oxygen
4.6 Interesting case of copper sulphate pentahydrate
Further reading
Self-assessment questions and exercises
References
CH005.pdf
Chapter 5 Mott metal–insulator transition
5.1 Bandwidth-control and filling-control Mott transition
5.2 Theoretical approaches in Mott metal–insulator transition
5.2.1 Fermi-liquid based descriptions
5.2.2 Mott physics and metal–insulator transition
5.2.3 What is the nature of Mott metal–insulator transition?
5.2.4 Beyond mean-field theories
Further reading
Self-assessment questions and exercises
References
CH006.pdf
Chapter 6 Experimental studies on Mott metal–insulator transition
6.1 Temperature induced and bandwidth control Mott metal–insulator transition
6.1.1 Canonical Mott insulator Cr-doped V2O3
6.1.2 Case study of organic Mott-insulators κ-(BEDT-TTF)2X
6.1.3 Case study of the AM4Q8 compounds (A = Ga, Ge; M = V, Nb, Ta, Mo; Q = S, Se, Te)
6.2 Filling control Mott metal–insulator transition
6.2.1 Case study of R1−xAxTiO3
6.2.2 Case study of R1−xAxVO3
6.2.3 Case study of high TC oxide superconductors
6.3 Systems with additional degrees of freedom beyond strong electron correlation
6.3.1 Interesting properties of magnetite Fe3O4 and Verwey transition
6.3.2 Charge and orbital orderings in Mn-oxide compounds with colossal magneto-resistance
6.3.3 Interesting properties of 1T-TaS2
6.4 VO2 and NbO2: Peierls insulators or Mott insulators?
6.5 Sr2IrO4 and Sr3Ru2O7: Mott insulators or Slater insulators?
6.5.1 Sr2IrO4
6.5.2 Sr3Ru2O7
6.6 Mott insulating state in semiconductor surfaces
Self-assessment questions and exercises
References
CH007.pdf
Chapter 7 Electron band semiconductor devices
7.1 Physics of intrinsic and extrinsic semiconductors
7.2 Building blocks for semiconductor device
7.3 A brief history of major semiconductor devices and technologies
7.4 Single-junction semiconductor devices
7.5 Bipolar transistor
7.6 Metal–oxide–semiconductor field-effect transistor (MOSFET) and CMOS technology
7.6.1 CMOS technology
7.6.2 Semiconductor memory device
7.7 Beyond logic and memory: opto-electronic devices
7.8 Scaling of MOSFET
7.9 Limit of existing semiconductor technologies
7.10 Beyond CMOS technology
7.10.1 Ferroelectric random access memory and logic
7.10.2 Phase change random access memory
7.10.3 Magnetic random access memory and spintronics
7.10.4 Resistive random access memory
Further reading
Self-assessment questions and exercises
References
CH008.pdf
Chapter 8 Mott insulator and strongly correlated electron materials based devices
8.1 Mott metal–insulator transition: phase-coexistence and hysteresis
8.2 Mott devices and mechanism of operation
8.2.1 Mott-field effect transistor (MOTT-FET) and a comparison with MOSFET
8.2.2 Boltzmann switch versus Landau switch
8.2.3 Two-terminal Mott devices
8.3 Theoretical models of resistive switching
8.3.1 Resistor network model
8.3.2 Dissipative Hubbard model
8.4 Experimental situation on Mott devices
8.4.1 Mott switches and memory devices
8.4.2 Mott memristor and neuristor
8.4.3 Mott field effect transistors
8.4.4 Thermal and chemical sensors
8.4.5 Photovoltaic applications
8.4.6 Energy storage applications
8.4.7 Photonic devices
8.4.8 Interesting applications of nuclear fuel material UO2
8.4.9 Solid state refrigerant for magnetic cooling technology
8.4.10 Interesting applications of TaS2
Self-assessment questions and exercises
References
APP1.pdf
Chapter
A.1 Two-probe and four-probe electrical resistance measurements
A.2 Thermal conductivity measurements
A.3 Heat capacity measurements
A.4 Optical conductivity
A.5 Photo-electron spectroscopy
References
APP2.pdf
Chapter
Reference
APP3.pdf
Chapter
C.1 Harmonic oscillator problem
C.2 Many particle systems
References
APP4.pdf
Chapter
D.1 Green’s function
D.2 Hubbard’s approach in correlated electron systems using Green’s function
References
