Lead Chalcogenides remain one of the basic materials of modern infrared optoelectronics. This volume presents the properties of lead chalcogenides, including the basic physical features, the bulk and epitaxial growth technique, and the 2-D physics of lead chalcogenide-based structures. In addition, the theoretical appraoches for band structure and impurity state calculations are reviewed.
Author(s): D. Khokhlov
Series: Optoelectronic Properties of Semiconductors and Superlattices, 18
Edition: 1
Publisher: CRC Press
Year: 2021
Language: English
Pages: 711
City: New York
Cover
Half Title
Series Page
Title Page
Copyright Page
Table of Contents
About the Series
Preface
Part I: Basic Physical Features of the Lead Chalcogenides
1: Lead Chalcogenides: Basic Physical Features
Part II: Synthesis of the Lead Chalcogenides
2: Phase Diagrams and Growth of Bulk Lead Chalcogenide Crystals
3: Molecular Beam Epitaxy of IV-VI Heterostructures and Superlattices
Part III: Physics of the Lead Chalcogenides
4: Optical Properties and Low-Dimensional Systems of IV-VI Semiconductors
5: Lead Telluride n-i-p-i Structures: An Electronic System in the Intermediate Regime Between Two and Three Dimensions
6: Semimagnetic Semiconductors Based on Lead Chalcogenides
7: Doped Lead Chalcogenides
8: Band Structure and Impurity States in the Lead Chalcogenides
Part IV: Applications of the Lead Chalcogenides
9: Laser Applications of IV-VI Semiconductors
10: Application of Lead Chalcogenides in Thermoelectric Devices
11: Lead Chalcogenide Infrared Detectors Grown on Silicon Substrates
12: Infrared Photodetectors Based on Doped Lead Tellurides
Index
