Kinetic Studies in GeO2/Ge System: A Retrospective from 2021 investigates reaction kinetics in GeO2/Ge systems, aiming to demonstrate the fundamentals of the GeO2/Ge interface and to give insight into the distinctive features and performance of Ge (germanium) applied to advanced complementary metal oxide semiconductor (CMOS) devices.
This book first reviews the development of MOS technology and discusses the potentials of emerging Ge and the challenges facing it as a contentious channel material, once promising to replace Si (silicon) for advanced nodes. The study systematically analyzes the following aspects of GeO2/Ge stacks that will shed light on the characteristics and reaction principles of the system: GeO2/Ge degradation, Ge passivation techniques, desorption kinetics of GeO from GeO2/Ge, the relationship between GeO2 crystallization and GeO2/Ge interface reaction, and the oxidation kinetics of Ge. Based on findings from the intrinsic properties of GeO2/Ge, the author also compares it with prevalent SiO2/Si systems and demonstrates the essential differences between the two, contributing to quality control, process optimization, and technology advancements of GeO2/Ge.
The book will be a useful reference for researchers, professionals, and students interested in electronic materials, condenser matter physics, microelectronic engineering, and semiconductors.
Author(s): Sheng-Kai Wang
Series: Frontiers in Semiconductor Technology
Publisher: CRC Press
Year: 2022
Language: English
Pages: 156
City: Boca Raton
Cover
Half Title
Series
Title
Copyright
Contents
List of Figures
List of Tables
Preface
Chapter 1 ▪ Introduction
1.1 Scaling Trends of MOS Technology
1.1.1 Scaling Rule
1.1.2 Challenge in Advanced Technology Node
1.2 Motivation of Emerging Ge as Channel Material
1.3 Challenges in the Ge-Channel Process
1.3.1 Historical Study in Ge
1.3.2 GeO2/Ge Stack Degradation
1.3.3 Ge-Passivation Techniques
1.4 Objective
1.5 Book Organization
Chapter 2 ▪ Fabrication and Characterization Methods
2.1 Introduction
2.2 Stack Preparation
2.2.1 Ge Wafer Cleaning
2.2.2 Film Formation and Annealing Treatment
2.2.3 Electrode Deposition
2.3 Thermal Desorption Characterization
2.3.1 Thermal Desorption Spectroscopy (TDS)
2.3.2 Temperature Calibration of TDS
2.3.3 Quadrapole Mass Spectrometer (QMS)
2.3.4 Desorption Reaction
2.3.5 Desorption Rate
2.3.6 TDS Analysis
Chapter 3 ▪ Desorption Kinetics of GeO from GeO2/Ge
3.1 Introduction
3.2 Revisiting GeO Desorption Using the Ge (100) Substrate
3.3 Ge Substrate Consumption during Desorption
3.4 Diffusion-Limited GeO Desorption
3.5 18O and 73Ge Isotope Tracing in GeO Desorption
3.6 Reactions at the GeO2/Ge Interface
3.7 Evidence of Vo Consumption during GeO Desorption
3.8 Nonuniform GeO Desorption
3.9 A Vo Diffusion-Induced GeO Desorption Model
3.10 Kinetic Calculation of GeO Desorption from GeO2/Ge
3.11 Disproportionate Reaction in the GeO2/Ge System
3.12 GeO Desorption-Induced Electrical Degradation
3.13 Summary
Chapter 4 ▪ Structural Transition Kinetics in GeO2/Ge
4.1 Introduction
4.2 Structures of Germanium Oxides
4.2.1 Structure of GeO2
4.2.2 Structure of GeO
4.3 Structural Transition in GeO2/Ge Systems
4.4 Origin of the Voids in Nonuniform Desorption Region
4.5 Unified Model for Kinetic Effects in GeO2/Ge Systems
4.6 Summary
Chapter 5 ▪ Oxidation in GeO2/Ge Stacks
5.1 Introduction
5.2 Deal-Grove Model Breaks Down for Ge Oxidation
5.3 Active Oxidation in GeO2/Ge Stacks
5.3.1 Definition of Active Oxidation and Passive Oxidation
5.3.2 Direct Observation of Ge Active Oxidation
5.3.3 O2 Pressure-Dependent Oxidation
5.3.4 Activation Energy of Active Oxidation
5.4 Guidelines for Interface Control of GeO2/Ge Stacks
5.4.1 pO2-T Diagram of GeO2/Ge Oxidation and GeO Desorption
5.4.2 pO2-T Control for a GeO2/Ge Stack with High Quality
5.5 A Fundamental Consideration of GeO2/Ge and SiO2/Si
5.6 Summary
